Datasheet > MMDT2222A

MMDT2222A

更新时间： 2024-09-09 10:51:59

品牌	Logo	应用领域
SECOS		晶体晶体管光电二极管
页数	文件大小	规格书
4页	373K
描述
Multi-Chip Transistor

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中文翻译

获取价格

技术参数
数据手册

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MMDT2222A 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.6	Is Samacsys：	N
Base Number Matches：	1

MMDT2222A 数据手册

MMDT2222A

NPN Silicon

Elektronische Bauelemente

Multi-Chip Transistor

RoHS Compliant Product

SOT-363

8^o

.055(1.40)

.047(1.20)

* Features

.026TYP

(0.65TYP)

.021REF

(0.525)REF

Power dissipation

PCM : 0.15 W (Tamp.= 25 C)

Collector current

.053(1.35)

.045(1.15)

.096(2.45)

.085(2.15)

.018(0.46)

.010(0.26)

C₁

ICM : 0.6 A

.014(0.35)

.006(0.15)

.003(0.08)

.087(2.20)

.079(2.00)

Collector-base voltage

.004(0.10)

.000(0.00)

V(BR)CBO : 75 V

E ₁

.043(1.10)

.035(0.90)

.039(1.00)

.035(0.90)

Operating & Storage junction Temperature

Tj, Tstg : -55 C~ +150 C

Marking: K1P

Dimensions in inches and (millimeters)

Electrical Characteristics( Tamb=25^OC unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Ic= 10μA， I_E=0

Ic= 10mA， I_B=0

I_E=10μA， I_C=0

V_CB=60 V , I_E=0

0. 01

μA

Emitter cut-off current

I_EBO

V_EB= 3V ,

I_C=0

h_FE(1)

V_CE=10V, I_C= 0.1mA

V_CE=10V, I_C= 1mA

V_CE=10V, I_C= 10mA

V_CE=10V, I_C= 150mA

V_CE=10V, I_C= 500mA

h_FE(2)

h_FE(3)

DC current gain

h_FE(4)

100

300

h_FE(5)

h_FE(6)

V_CE=1V,

I_C= 150mA

V_CE(sat)1

V_CE(sat)2

V_BE(sat)1

I_C=150 mA, I_B= 15mA

I_C=500 mA, I_B= 50mA

I_C=150 mA, I_B=15mA

I_C=500 mA, I_B= 50mA

V_CE=20V, I_C= 20mA

f=100MHz

0.3

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

0.6

1.2

V_BE(sat)2

300

MHz

f_T

V_CB=10V, I_E= 0

f=1MHz

Output Capacitance

C_ob

C_ib

V_EB=0.5V, I_C= 0

f=1MHz

Input Capacitance

V_CE=10V, I_C=100μA

f=1KHz,Rs=1KΩ

Noise Figure

Delay time

Rise time

Storage time

Fall time

t_d

t_r

V_CC=30V, I_C=150mA

_BE(off)=0.5V,I_B1=15mA

_CC=30V, I_C=150mA

225

t_S

t_f

I_B1= I_B2= 15mA

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jan-2006 Rev. B

Page 1 of 4

12 3 4

中文翻译

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