Datasheet > MMBTSC1815

MMBTSC1815

更新时间： 2022-10-12 15:15:07

品牌	Logo	应用领域
平晶微 - PJSEMI		/
页数	文件大小	规格书
4页	1133K
描述
PNP Transistor

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数据手册

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MMBTSC1815 数据手册

MMBTSA1015

PNP Transistor

Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at -VCE = 6 V, -IC = 2 mA Current Gain Group

140

240

400

700

H_FE

120

200

350

Collector Base Cutoff Current

at -VCB = 50 V

Collector Emitter Cutoff Current

at -VCE = 50 V

-I_CBO

-I_CEO

100

μA

100

Emitter Base Cutoff Current

at -VEB = 5 V

-I_EBO

Collector Base Breakdown Voltage

at -IC = 100 μA

Collector Emitter Breakdown Voltage

at -IC = 0.1 mA

-V_(BR)CBO

-V_(BR)CEO

-V_(BR)EBO

-V_CE(sat)

-V_BE(sat)

f_T

Emitter Base Breakdown Voltage

at -IE = 100 μA

Collector Emitter Saturation Voltage

at -IC = 100 mA, -IB = 10 mA

0.3

Base Emitter Saturation Voltage

at -IC = 100 mA, -IB = 10 mA

1.1

MHz

Transition Frequency

at -VCE = 10 V, -IC = 1 mA, f = 30 MHz

Collector Base Capacitance

at -VCB = 10 V, f = 1 MHz

C_ob

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