Datasheet > MMBTRC112SS

MMBTRC112SS

更新时间： 2024-09-14 05:49:23

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
1页	124K
描述
NPN Silicon Epitaxial Planar Transistor

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中文翻译

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数据手册

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MMBTRC112SS 数据手册

MMBTRC110SS…MMBTRC114SS

NPN Silicon Epitaxial Planar Transistor

for switching and interface circuit and drive circuit

applications

Collector

Features

• With built-in bias resistors

Base

• Simplify circuit design

• Reduce a quantity of parts and

manufacturing process

SOT-23 Plastic Package

Emitter

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

V_CBO

V_CEO

V_EBO

I_C

100

Power Dissipation

P_tot

T_j

200

Junction Temperature

Storage Temperature Range

150

T_S

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

120

Typ.

Max.

Unit

DC Current Gain

at V_CE= 5 V, I_C= 1 mA

h_FE

Collector Cutoff Current

at V_CB= 50 V

I_CBO

100

0.3

Emitter Cutoff Current

at V_EB= 5 V

I_EBO

V_CE(sat)

f_T

Collector Emitter Saturation Voltage

at I_C= 10 mA, I_B= 0.5 mA

Transition Frequency

250

MHz

at V_CE= 10 V, I_C= 5 mA

MMBTRC110SS

MMBTRC111SS

MMBTRC112SS

MMBTRC113SS

MMBTRC114SS

4.7

100

Input Resistor

R₁

KΩ

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 08/12/2006

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