MMBTRC110SS…MMBTRC114SS-AH
NPN Silicon Epitaxial Planar Digital Transistor
Features
Collector
• AEC-Q101 Qualified
R1
Base
• With built-in bias resistors
• Simplify circuit design
1. Base 2. Emitter 3. Collector
SOT-23 Plastic Package
Emitter
• Reduce a quantity of parts and
manufacturing process
• Halogen and Antimony Free(HAF), RoHS compliant
Applications
• For switching and interface circuit and drive circuit applications
Absolute Maximum Ratings (Ta = 25 )
Parameter
Symbol
Value
Unit
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
50
V
V
50
5
100
V
mA
mW
Power Dissipation
Ptot
200
Junction Temperature
Storage Temperature Range
Tj
150
TStg
- 55 to + 150
Thermal Characteristics
Parameter
Symbol
RθJA
Max.
625
Unit
/W
Thermal Resistance from Junction to Ambient 1)
1) Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
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Dated: 08/08/2023 Rev: 01