Datasheet > MMBTRC231S

MMBTRC231S

更新时间： 2024-09-23 05:49:23

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
1页	125K
描述
NPN Silicon Epitaxial Planar Transistor

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数据手册

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MMBTRC231S 数据手册

MMBTRC231S...MMBTRC234S

NPN Silicon Epitaxial Planar Transistor

For switching, audio muting, interface circuit and

driver circuit applications

Collector

Emitter

Base

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

V_CBO

V_CEO

V_EBO

I_C

600

Total Power Dissipation

Junction Temperature

Storage Temperature Range

P_tot

T_j

200

150

T_S

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

200

Typ.

Max.

800

Unit

DC Current Gain

h_FE

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

at V_CE= 5 V, I_C= 50 mA

Collector Base Breakdown Voltage

at I_C= 50 µA

Collector Emitter Breakdown Voltage

at I_C= 1 mA

Emitter Base Breakdown Voltage

at I_E= 50 µA

Collector Base Cutoff Current

at V_CB= 30 V

0.5

µA

MHz

Collector Emitter Saturation Voltage

at I_C= 50 mA, I_B= 2.5 mA

V_CE(sat)

f_T

Transition Frequency

200

at V_CE= 10 V, -I_E= 50 mA, f = 100 MHz

MMBTRC231S

MMBTRC233S

MMBTRC234S

2.2

4.7

Input Resistor

KΩ

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 07/07/2008

中文翻译

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