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MMBTRC113SS-AH PDF预览

MMBTRC113SS-AH

更新时间: 2024-09-24 14:53:43
品牌 Logo 应用领域
先科 - SWST /
页数 文件大小 规格书
7页 1525K
描述
数字三极管

MMBTRC113SS-AH 数据手册

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MMBTRC110SS…MMBTRC114SS-AH  
NPN Silicon Epitaxial Planar Digital Transistor  
Features  
Collector  
• AEC-Q101 Qualified  
R1  
Base  
• With built-in bias resistors  
• Simplify circuit design  
1. Base 2. Emitter 3. Collector  
SOT-23 Plastic Package  
Emitter  
• Reduce a quantity of parts and  
manufacturing process  
• Halogen and Antimony Free(HAF), RoHS compliant  
Applications  
• For switching and interface circuit and drive circuit applications  
Absolute Maximum Ratings (Ta = 25 )  
Parameter  
Symbol  
Value  
Unit  
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
50  
V
V
50  
5
100  
V
mA  
mW  
Power Dissipation  
Ptot  
200  
Junction Temperature  
Storage Temperature Range  
Tj  
150  
TStg  
- 55 to + 150  
Thermal Characteristics  
Parameter  
Symbol  
RθJA  
Max.  
625  
Unit  
/W  
Thermal Resistance from Junction to Ambient 1)  
1) Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.  
®
1 / 7  
Dated: 08/08/2023 Rev: 01  

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