MMBTRC116SS…MMBTRC122SS-AH
NPN Silicon Epitaxial Planar Transistors
Features
Collector
(Output)
• AEC-Q101 Qualified
R1
Base
(Input)
• With built-in bias resistors
R2
• Simplify circuit design
1.Base 2.Emitter 3.Collector
SOT-23 Plastic Package
• Reduce a quantity of parts and
manufacturing process
Emitter
(Common)
• Halogen and Antimony Free(HAF), RoHS compliant
Applications
• For switching, interface circuit and drive circuit applications
Resistor Values
Type
R1 (KΩ)
1
R2 (KΩ)
10
MMBTRC116SS
MMBTRC117SS
MMBTRC118SS
MMBTRC119SS
MMBTRC120SS
MMBTRC121SS
MMBTRC122SS
2.2
2.2
2.2
10
4.7
10
10
4.7
47
10
100
100
Absolute Maximum Ratings (Ta = 25℃)
Parameter
Symbol
Value
Unit
Collector Emitter Voltage
Collector Base Voltage
VCEO
VCBO
50
50
V
V
MMBTRC116SS
MMBTRC117SS
MMBTRC118SS
MMBTRC119SS
MMBTRC120SS
MMBTRC121SS
MMBTRC122SS
10, - 5
12, - 10
12, - 5
20, - 7
30, - 10
40, - 15
40, - 10
100
V
Input Voltage
VI
Collector Current
Ic
mA
mW
℃
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Ptot
Tj
200
150
TStg
- 55 to + 150
℃
Thermal Characteristics
Parameter
Symbol
RθJA
Max.
625
Unit
Thermal Resistance from Junction to Ambient 1)
℃/W
1) Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
®
1 / 6
Dated: 27/06/2023 Rev: 02