MMBTRC110SS…MMBTRC114SS
NPN Silicon Epitaxial Planar Transistor
for switching and interface circuit and drive circuit
applications
Collector
Features
R1
• With built-in bias resistors
Base
• Simplify circuit design
• Reduce a quantity of parts and
manufacturing process
SOT-23 Plastic Package
Emitter
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Value
Unit
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
50
V
V
50
5
100
V
mA
mW
Power Dissipation
Ptot
Tj
200
O
C
Junction Temperature
Storage Temperature Range
150
O
C
TS
- 55 to + 150
O
Characteristics at Ta = 25 C
Parameter
Symbol
Min.
120
Typ.
-
Max.
-
Unit
DC Current Gain
at VCE = 5 V, IC = 1 mA
hFE
-
nA
nA
V
Collector Cutoff Current
at VCB = 50 V
ICBO
-
-
-
-
-
100
100
0.3
-
Emitter Cutoff Current
at VEB = 5 V
IEBO
VCE(sat)
fT
-
-
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
Transition Frequency
250
MHz
at VCE = 10 V, IC = 5 mA
MMBTRC110SS
MMBTRC111SS
MMBTRC112SS
MMBTRC113SS
MMBTRC114SS
-
-
-
-
-
4.7
10
100
22
-
-
-
-
-
Input Resistor
R1
KΩ
47
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 08/12/2006