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MMBTRC103SS-AH PDF预览

MMBTRC103SS-AH

更新时间: 2024-09-10 14:48:51
品牌 Logo 应用领域
先科 - SWST /
页数 文件大小 规格书
9页 1808K
描述
数字三极管

MMBTRC103SS-AH 数据手册

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MMBTRC101SS~MMBTRC106SS-AH  
NPN Silicon Epitaxial Planar Digital Transistors  
For switching and interface circuit and drive circuit applications  
Collector  
(Output)  
Features  
R1  
Base  
• AEC-Q101 Qualified  
(Input)  
R2  
• With built-in bias resistors  
• Simplify circuit design  
• Reduce a quantity of parts and  
manufacturing process  
1. Base  
2. Emitter 3. Collector  
Emitter  
(Common)  
SOT-23 Plastic Package  
• Halogen and Antimony Free(HAF),  
RoHS compliant  
Resistor Values  
Type  
R1 (KΩ)  
4.7  
R2 (KΩ)  
Type  
R1 (KΩ)  
47  
R2 (KΩ)  
47  
MMBTRC101SS  
MMBTRC102SS  
MMBTRC103SS  
4.7  
10  
22  
MMBTRC104SS  
MMBTRC105SS  
MMBTRC106SS  
10  
2.2  
47  
22  
4.7  
47  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Symbol  
VCBO  
Value  
50  
Unit  
V
Collector Base Voltage  
Collector Emitter Voltage  
VCEO  
50  
V
20, -10  
30, -10  
40, -10  
40, -10  
12, -5  
20, -5  
100  
MMBTRC101SS  
MMBTRC102SS  
MMBTRC103SS  
MMBTRC104SS  
MMBTRC105SS  
MMBTRC106SS  
Emitter Base Voltage  
VEBO  
V
Collector Current  
IC  
ICM  
mA  
mA  
mW  
Peak Collector Current, Pulsed  
Total Power Dissipation  
100  
Ptot  
200  
O
Operating Junction and Storage Temperature Range  
Tj ,Tstg  
- 55 to + 150  
C
Thermal Characteristics  
Parameter  
Symbol  
RθJA  
Max.  
625  
Unit  
/W  
Thermal Resistance from Junction to Ambient 1)  
1) Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.  
®
1 / 9  
Dated: 11/11/2022 Rev: 04  

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