Datasheet > MMBTRC110SS

MMBTRC110SS

更新时间： 2023-12-06 20:07:37

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
7页	442K
描述
数字三极管

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数据手册

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MMBTRC110SS 数据手册

MMBTRC110SS…MMBTRC114SS

NPN Silicon Epitaxial Planar Digital Transistor

Features

Collector

• With built-in bias resistors

Base

• Simplify circuit design

• Reduce a quantity of parts and

manufacturing process

Emitter

SOT-23 Plastic Package

Applications

• For switching and interface circuit and drive circuit applications

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

V_CBO

V_CEO

V_EBO

I_C

100

200

150

℃

Power Dissipation

P_tot

T_j

Junction Temperature

Storage Temperature Range

T_Stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

625

Unit

Thermal Resistance from Junction to Ambient ¹⁾

℃/W

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

1 / 7

Dated: 23/06/2022 Rev: 02

12 3 4 5 6 7

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