Datasheet > MMBTA56

MMBTA56

更新时间： 2024-11-21 18:09:19

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	436K
描述
SOT-23

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中文翻译

获取价格

数据手册

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MMBTA56 数据手册

MMBTA56

BIPOLAR TRANSISTOR (PNP)

FEATURES

 Complementary to MMBTA06

 For switching and amplifier applications

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

-80

Unit

Collector-Base Voltage

Collector-Emitter Voltage

-80

Emitter-Base Voltage

-4

Collector Current

Collector Power Dissipation

-500

225

°C/W

°C

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

555

150

Storage Temperature

TSTG

-55 ~+150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Uni

Parameter

Symbol Min Typ Max

Conditions

V(BR)CBO

V(BR)CEO

V(BR)EBO

I_CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-80

-4

I_C=-100uA，I_E=0

I_C=-1mA，I_B=0

I_E=-100uA，I_C=0

-0.1

-1

uA V_CB=-80V, I_E=0

Collector cut-off current

Emitter cut-off current

V_CE=-60V, I_E=0

I_CEO

I_EBO

h_FE1

-0.1

400

V_EB=-3V, I_C=0

100

V_CE=-1V, I_C=-10mA

V_CE=-1V, I_C=-100mA

DC current gain

h_FE2

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

-0.25

-1.2

I_C=-100mA，I_B=-10mA

V_CE=-1V，I_B=-100mA

MHz V_CE=-1V,I_C=-100mA,f=100

MHz

f_T

CLASSIFICATION OF h_FE

Rank

Range

100-400

2GM

Marking

1 / 4

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