Datasheet > MMBTA05

MMBTA05

更新时间： 2024-11-06 10:52:27

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	319K
描述
Epitaxial Transistor

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中文翻译

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数据手册

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MMBTA05 数据手册

MMBTA05

NPN Silicon

Epitaxial Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

SOT-23



The MMBTA05 is Amplifier Transistor

FEATURES

Top View

C B



Driver Transistor

MARKING

Collector



Millimeter

Min. Max.

Millimeter

REF.

Min.

0.40

0.08

Max.

0.18

0.60

0.20

2.70

2.10

1.20

0.89

1.78

0.30

3.04

2.80

1.60

1.40

2.04

0.50



Base

0.6 REF.

0.85

1.15



Emitter

MAXIMUM RATINGS (at T = 25°C unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector - Base Voltage

V_CBO

V_CEO

V_EBO

I_C

Collector - Emitter Voltage

Emitter - Base Voltage

0.5

Collector Current - Continuous

Collector Power Dissapation

Junction, Storage Temperature

P_C

300

℃

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (at T = 25°C unless otherwise specified)

PARAMETER

TEST CONDITIONS

SYMBOL

MIN.

MAX. UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

I_C=100µA, I_E=0

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=1mA, I_B=0

I_E=100µA, I_C=0

V_CB=60V, I_E=0

0.1

400

µA

Collector Cut-Off Current

V_CE=60V, I_B=0

I_CEO

Collector Cut-Off Current

V_EB=3V, I_C=0

I_EBO

V_CE=1V, I_C=10mA

V_CE=1V, I_C=100mA

I_C=100mA, I_B=10mA

V_CE=1V, I_C=100mA

V_CE=2V, I_C=10mA,f=100MHz

h_FE1

100

DC Current Gain

h_FE2

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

V_CE(sat)

V_BE

0.25

1.2

Transition Frequency

F_T

100

MHz

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

26-Oct-2009 Rev. C

Page 1 of 2

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