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MMBT3904WT1 PDF预览

MMBT3904WT1

更新时间: 2024-01-22 09:11:02
品牌 Logo 应用领域
威伦 - WILLAS 晶体晶体管
页数 文件大小 规格书
11页 466K
描述
General Purpose Transistors

MMBT3904WT1 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:0.52Is Samacsys:N
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHz最大关闭时间(toff):250 ns
最大开启时间(吨):70 nsBase Number Matches:1

MMBT3904WT1 数据手册

 浏览型号MMBT3904WT1的Datasheet PDF文件第2页浏览型号MMBT3904WT1的Datasheet PDF文件第3页浏览型号MMBT3904WT1的Datasheet PDF文件第4页浏览型号MMBT3904WT1的Datasheet PDF文件第5页浏览型号MMBT3904WT1的Datasheet PDF文件第6页浏览型号MMBT3904WT1的Datasheet PDF文件第7页 
NPN  
MMBT3904WT1  
PNP  
MMBT3906WT1  
WILLAS  
GeneralPurposeTransistors  
NPN and PNP Silicon  
These transistors are designed for general purpose amplifier applications. They are housed  
in the SOT–323/SC–70 which is designed for low power surface mount applications.  
ƽ
We declare that the material of product compliance with RoHS requirements.  
SOT– 323  
Pb-Free package is available  
RoHS product for packing code suffix ”G”  
Halogen free product for packing code suffix “H”  
GENERAL PURPOSE  
AMPLIFIER TRANSISTORS  
SURFACE MOUNT  
DEVICE MARKING AND ORDERING INFORMATION  
Device  
Marking  
Package  
Shipping  
MMBT3904WT1  
AM  
SOT-323/SC-70  
3000/Tape&Reel  
MMBT3906WT1  
2A  
SOT-323/SC-70  
3000/Tape&Reel  
MAXIMUM RATINGS  
3
Rating  
Symbol  
Value  
40  
Unit  
COLLECTOR  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
M MBT3904WT1  
M MBT3906WT1  
M MBT3904WT1  
M MBT3906WT1  
MMBT3904WT1  
M MBT3906WT1  
M MBT3904WT1  
M MBT3906WT1  
VCEO  
Vdc  
– 40  
60  
1
BASE  
VCBO  
VEBO  
IC  
Vdc  
Vdc  
– 40  
6.0  
2
EMITTER  
– 5.0  
200  
M MBT3904WT1  
Collector Current — Continuous  
mAdc  
– 200  
3
COLLECTOR  
1
BASE  
2
EMITTER  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
M MBT3906WT1  
Total Device Dissipation (1)  
T A =25 °C  
P D  
150  
mW  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R θJA  
833  
°C/W  
°C  
T J , T stg  
–55 to +150  
2012-11  
WILLAS ELECTRONIC CORP.  

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