Datasheet > MMBT3904WT1

MMBT3904WT1

更新时间： 2024-12-01 11:59:31

品牌	Logo	应用领域
威伦 - WILLAS		晶体晶体管
页数	文件大小	规格书
11页	466K
描述
General Purpose Transistors

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中文翻译

获取价格

数据手册

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MMBT3904WT1 数据手册

NPN

MMBT3904WT1

PNP

MMBT3906WT1

WILLAS

GeneralPurposeTransistors

NPN and PNP Silicon

These transistors are designed for general purpose amplifier applications. They are housed

in the SOT–323/SC–70 which is designed for low power surface mount applications.

We declare that the material of product compliance with RoHS requirements.

SOT– 323

Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

GENERAL PURPOSE

AMPLIFIER TRANSISTORS

SURFACE MOUNT

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Package

Shipping

MMBT3904WT1

SOT-323/SC-70

3000/Tape&Reel

MMBT3906WT1

SOT-323/SC-70

3000/Tape&Reel

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

COLLECTOR

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

M MBT3904WT1

M MBT3906WT1

M MBT3904WT1

M MBT3906WT1

MMBT3904WT1

M MBT3906WT1

M MBT3904WT1

M MBT3906WT1

V_CEO

Vdc

– 40

BASE

V_CBO

V_EBO

I_C

Vdc

– 40

6.0

EMITTER

– 5.0

200

M MBT3904WT1

Collector Current — Continuous

mAdc

– 200

COLLECTOR

BASE

EMITTER

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

M MBT3906WT1

Total Device Dissipation (1)

T _A=25 °C

P _D

150

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R _θJA

833

°C/W

°C

T _J, T _stg

–55 to +150

2012-11

WILLAS ELECTRONIC CORP.

12 3 4 5 6 7...11

中文翻译

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