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MMBF5457_NL

更新时间: 2024-02-28 02:24:36
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器晶体管开关光电二极管PC
页数 文件大小 规格书
5页 131K
描述
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, SOT-23, 3 PIN

MMBF5457_NL 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:CASE 318-07, 3 PINReach Compliance Code:unknown
风险等级:5.7配置:SINGLE
最小漏源击穿电压:25 VFET 技术:JUNCTION
最大反馈电容 (Crss):3 pFJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL功耗环境最大值:0.225 W
最大功率耗散 (Abs):0.225 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MMBF5457_NL 数据手册

 浏览型号MMBF5457_NL的Datasheet PDF文件第2页浏览型号MMBF5457_NL的Datasheet PDF文件第3页浏览型号MMBF5457_NL的Datasheet PDF文件第4页浏览型号MMBF5457_NL的Datasheet PDF文件第5页 
MMBF5457  
MMBF5458  
MMBF5459  
2N5457  
2N5458  
2N5459  
G
S
TO-92  
G
S
SOT-23  
Mark: 6D / 61S / 6L  
NOTE: Source & Drain  
are interchangeable  
D
D
N-Channel General Purpose Amplifier  
This device is a low level audio amplifier and switching transistors,  
and can be used for analog switching applications. Sourced from  
Process 55.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VDG  
Drain-Gate Voltage  
Gate-Source Voltage  
Forward Gate Current  
25  
- 25  
V
V
VGS  
IGF  
10  
mA  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N5457-5459  
*MMBF5457-5459  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
125  
350  
2.8  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
357  
556  
°C/W  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  

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