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MJE5850AN

更新时间： 2024-11-02 20:06:31
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
8页 152K
描述
TRANSISTOR 8 A, 300 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

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中文翻译

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MJE5850AN 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：PLASTIC, TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.82
外壳连接：COLLECTOR最大集电极电流 (IC)：8 A
集电极-发射极最大电压：300 V配置：SINGLE
最小直流电流增益 (hFE)：5JESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：PNP认证状态：Not Qualified
表面贴装：NO端子面层：TIN LEAD
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MJE5850AN 数据手册

 浏览型号MJE5850AN的Datasheet PDF文件第2页浏览型号MJE5850AN的Datasheet PDF文件第3页浏览型号MJE5850AN的Datasheet PDF文件第4页浏览型号MJE5850AN的Datasheet PDF文件第5页浏览型号MJE5850AN的Datasheet PDF文件第6页浏览型号MJE5850AN的Datasheet PDF文件第7页 
MJE5850, MJE5851,  
MJE5852  
SWITCHMODE Series PNP  
Silicon Power Transistors  
The MJE5850, MJE5851 and the MJE5852 transistors are designed  
for high−voltage, high−speed, power switching in inductive circuits  
where fall time is critical. They are particularly suited for line operated  
SWITCHMODE applications.  
http://onsemi.com  
8 AMPERE  
PCP SILICON  
POWER TRANSISTORS  
300−350−400 VOLTS  
80 WATTS  
Features  
• Switching Regulators  
• Inverters  
• Solenoid and Relay Drivers  
• Motor Controls  
COLLECTOR  
2, 4  
• Deflection Circuits  
• Fast Turn−Off Times  
• Operating Temperature Range −65 to +150_C  
1
• 100_C Performance Specified for:  
♦ Reversed Biased SOA with Inductive Loads  
♦ Switching Times with Inductive Loads  
♦ Saturation Voltages  
BASE  
3
EMITTER  
♦ Leakage Currents  
4
• Complementary to the MJE13007G Series  
• These Devices are Pb−Free and are RoHS Compliant*  
MAXIMUM RATINGS  
TO−220  
CASE 221A  
STYLE 1  
Rating  
Symbol  
Value  
Unit  
Collector−Emitter Voltage  
MJE5850  
MJE5851  
V
Vdc  
CEO(sus)  
300  
350  
400  
1
2
3
MJE5852  
Collector−Emitter Voltage  
MJE5850  
MJE5851  
V
CEV  
Vdc  
350  
400  
450  
MARKING DIAGRAM  
MJE5852  
Emitter Base Voltage  
V
6.0  
8.0  
16  
Vdc  
Adc  
Adc  
Adc  
Adc  
EB  
Collector Current − Continuous (Note 1)  
Collector Current − Peak (Note 1)  
Base Current − Continuous (Note 1)  
Base Current − Peak (Note 1)  
Total Power Dissipation  
I
C
I
I
CM  
MJE585xG  
AY WW  
I
4.0  
8.0  
B
BM  
P
D
@ T = 25_C  
80  
0.640  
W
C
Derate above 25_C  
W/_C  
Operating and Storage Junction  
Temperature Range  
T , T  
–65 to 150  
_C  
J
stg  
MJE585x =  
Device Code  
x = 0, 1, or 2  
Pb−Free Package  
Assembly Location  
Year  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.  
G
=
=
=
=
A
Y
WW  
Work Week  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 7 of this data sheet.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
August, 2013 − Rev. 6  
MJE5850/D  
 
12345678

中文翻译

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