MJE5850G

更新时间： 2024-11-02 04:15:31

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管 PC
页数	文件大小	规格书
8页	105K
描述
8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS

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中文翻译

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技术参数
数据手册
替代型号

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MJE5850G 技术参数

是否无铅：	不含铅	生命周期：	Active
零件包装代码：	TO-220AB	包装说明：	ROHS COMPLIANT, CASE 221A-09, 3 PIN
针数：	3	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	风险等级：	0.88
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	8 A
集电极-发射极最大电压：	300 V	配置：	SINGLE WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)：	5	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	JESD-609代码：	e3
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	260	极性/信道类型：	PNP
最大功率耗散 (Abs)：	80 W	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	NO
端子面层：	Tin (Sn)	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

MJE5850G 数据手册

MJE5850, MJE5851,

MJE5852

MJE5851 and MJE5852 are Preferred Devices

SWITCHMODEt Series

PNP Silicon Power

Transistors

http://onsemi.com

The MJE5850, MJE5851 and the MJE5852 transistors are designed

for high−voltage, high−speed, power switching in inductive circuits

where fall time is critical. They are particularly suited for line operated

SWITCHMODE applications.

8 AMPERE

PCP SILICON

POWER TRANSISTORS

300−350−400 VOLTS

80 WATTS

Features

• Switching Regulators

• Inverters

• Solenoid and Relay Drivers

• Motor Controls

• Deflection Circuits

• Fast Turn−Off Times

♦ 100 ns Inductive Fall Time @ 25_C (Typ)

♦ 125 ns Inductive Crossover Time @ 25°C (Typ)

• Operating Temperature Range −65 to +150_C

• 100_C Performance Specified for:

♦ Reversed Biased SOA with Inductive Loads

♦ Switching Times with Inductive Loads

♦ Saturation Voltages

♦ Leakage Currents

MARKING

DIAGRAM

• Pb−Free Packages are Available*

MJE585xG

AY WW

TO−220AB

CASE 221A−09

STYLE 1

MJE585x = Device Code

x = 0, 1, or 2

= Pb−Free Package

= Assembly Location

= Year

= Work Week

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

February, 2006 − Rev. 4

MJE5850/D

12 3 4 5 6 7 8

中文翻译

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MJE5850G 替代型号

型号	品牌	替代类型	描述	数据表
MJE5850	ONSEMI	类似代替	PNP SILICON POWER TRANSISTORS
MJE5850	MOTOROLA	功能相似	8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS

与MJE5850G相关器件

型号	品牌	获取价格	描述	数据表
MJE5850L	MOTOROLA	获取价格	8A, 300V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5850N	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5850S	MOTOROLA	获取价格	8A, 300V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5850T	MOTOROLA	获取价格	8A, 300V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5850U	MOTOROLA	获取价格	8A, 300V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5850U2	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5850UA	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5850W	MOTOROLA	获取价格	8A, 300V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5850WD	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5851	MOTOROLA	获取价格	8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS

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