Datasheet > MJE5850BU

MJE5850BU

更新时间： 2024-11-03 09:45:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
63页	445K
描述
8A, 300V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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MJE5850BU 数据手册

SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

8 AMPERE

PNP SILICON

POWER TRANSISTORS

300, 350, 400 VOLTS

80 WATTS

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–volt-

age, high–speed, power switching in inductive circuits where fall time is critical. They

are particularly suited for line operated switchmode applications such as:

•

Switching Regulators

Inverters

Solenoid and Relay Drivers

Motor Controls

Deflection Circuits

Fast Turn–Off Times

100 ns Inductive Fall Time @ 25 C (Typ)

125 ns Inductive Crossover Time @ 25°C (Typ)

Operating Temperature Range –65 to +150 C

100 C Performance Specified for:

Reversed Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Saturation Voltages

CASE 221A–06

TO–220AB

Leakage Currents

MAXIMUM RATINGS

Rating

Symbol

MJE5850

300

MJE5851

350

MJE5852

400

Unit

Vdc

Adc

Collector–Emitter Voltage

Emitter Base Voltage

CEO(sus)

CEV

350

400

450

6.0

Collector Current — Continuous

Peak (1)

8.0

1 6

Base Current — Continuous

Peak (1)

4.0

8.0

Adc

Total Power Dissipation

Watts

@ T = 25 C

Derate above 25 C

0.640

W/ C

Operating and Storage Junction

Temperature Range

T , T

J stg

–65 to 150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

1.25

275

Unit

C/W

Thermal Resistance, Junction to Case

θJC

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

10%.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

3–644

Motorola Bipolar Power Transistor Device Data

12 3 4 5 6 7...63

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MJE5850C	MOTOROLA	获取价格	8 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-220AB
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MJE5850L	MOTOROLA	获取价格	8A, 300V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5850N	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5850S	MOTOROLA	获取价格	8A, 300V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5850T	MOTOROLA	获取价格	8A, 300V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5850U	MOTOROLA	获取价格	8A, 300V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5850U2	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5850UA	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast