MJE4353G

更新时间： 2024-09-16 12:04:59

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
8页	138K
描述
High-Voltage - High Power Transistors

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MJE4353G 数据手册

MJE4343 (NPN),

MJE4353 (PNP)

High-Voltage - High Power

Transistors

. . . designed for use in high power audio amplifier applications and

high voltage switching regulator circuits.

http://onsemi.com

Features

16 AMPS

POWER TRANSISTORS

COMPLEMENTARY

SILICON

• High Collector−Emitter Sustaining Voltage −

NPN PNP

= 160 Vdc − MJE4343 MJE4353

CEO(sus)

• High DC Current Gain − @ I = 8.0 Adc h = 35 (Typ)

• Low Collector−Emitter Saturation Voltage −

160 VOLTS

CE(sat)

= 2.0 Vdc (Max) @ I

= 8.0 Adc

• These are Pb−Free Devices

SOT−93

CASE 340D

STYLE 1

MAXIMUM RATINGS

Rating

Symbol

Max

160

7.0

Unit

Vdc

Adc

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

CEO

Collector Current

−

TO−247

CASE 340L

STYLE 3

Continuous

Peak (Note 1)

Base Current − Continuous

5.0

Adc

Total Power Dissipation @ T

125

Watts

= 25°C

Operating and Storage Junc-

tion

T , T

–65 to +150

°C

stg

NOTE: Effective June 2012 this device will

be available only in the TO−247

Temperature Range

package. Reference FPCN# 16827.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction

to Case

1.0

°C/W

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

1. Pulse Test: Pulse Width v 5.0 ms, Duty Cycle w 10%.

Publication Order Number:

May, 2012 − Rev. 5

MJE4343/D

12 3 4 5 6 7 8

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MJE4353G 替代型号

型号	品牌	替代类型	描述	数据表
MJE4353	ONSEMI	完全替代	High?Voltage High Power Transistors
2SA1386	SANKEN	功能相似	Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)

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