Datasheet > MJE5182

MJE5182

更新时间： 2024-11-21 12:17:23

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	114K
描述
isc Silicon NPN Power Transistors

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MJE5182 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

MJE5180/5181/5182

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 120V(Min)- MJE5180

= 140V(Min)- MJE5181

= 160V(Min)- MJE5182

·Low Saturation Voltage

·Complement to Type MJE5170/5171/5172

APPLICATIONS

·Designed for use in general purpose amplifier and

switching applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

120

140

160

120

140

160

UNIT

MJE5180

MJE5181

MJE5182

MJE5180

MJE5181

MJE5182

Collector-Base

V_CBO

Voltage

Collector-Emitter

Voltage

V_CEO

V_EBO

I_C

I_CM

I_B

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

Collector Power Dissipation

@ T_C=25℃

Collector Power Dissipation

@ T_a=25℃

P_C

T_J

Junction Temperature

150

-65~150

℃

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

℃/W

Thermal Resistance, Junction to Case

1.92

R_{th j-c}

Thermal Resistance, Junction to Ambient

62.5

R_{th j-a}

isc Website：www.iscsemi.cn

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