Datasheet > MJE5170

MJE5170

更新时间： 2024-11-25 10:55:47

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	115K
描述
isc Silicon PNP Power Transistors

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MJE5170 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistors

MJE5170/5171/5172

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= -120V(Min)- MJE5170

= -140V(Min)- MJE5171

= -160V(Min)- MJE5172

·Low Saturation Voltage

·Complement to Type MJE5180/5181/5182

APPLICATIONS

·Designed for use in general purpose amplifier and

switching applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

-120

-140

-160

-120

-140

-160

-5

UNIT

MJE5170

MJE5171

MJE5172

MJE5170

MJE5171

MJE5172

Collector-Base

V_CBO

Voltage

Collector-Emitter

Voltage

V_CEO

V_EBO

I_C

I_CM

I_B

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

-6

-10

Base Current-Continuous

-2

Collector Power Dissipation

@ T_C=25℃

Collector Power Dissipation

@ T_a=25℃

P_C

T_J

Junction Temperature

150

-65~150

℃

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

℃/W

Thermal Resistance, Junction to Case

1.92

R_{th j-c}

Thermal Resistance, Junction to Ambient

62.5

R_{th j-a}

isc Website：www.iscsemi.cn

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