MJE521G

更新时间： 2024-09-16 10:55:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管功率双极晶体管开关局域网
页数	文件大小	规格书
4页	63K
描述
Plastic Medium−Power NPN Silicon Transistor

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中文翻译

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技术参数
数据手册
替代型号

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MJE521G 技术参数

是否无铅：	不含铅	生命周期：	End Of Life
零件包装代码：	TO-225AA	包装说明：	LEAD FREE, PLASTIC, CASE 77-09, TO-225, 3 PIN
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	Factory Lead Time：	1 week
风险等级：	5.18	Is Samacsys：	N
最大集电极电流 (IC)：	4 A	集电极-发射极最大电压：	40 V
配置：	SINGLE	最小直流电流增益 (hFE)：	40
JEDEC-95代码：	TO-225AA	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3	元件数量：	1
端子数量：	3	最高工作温度：	135 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	最大功率耗散 (Abs)：	40 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Tin (Sn)
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

MJE521G 数据手册

MJE521

Plastic Medium−Power

NPN Silicon Transistor

These devices are designed for use in general−purpose amplifier and

switching circuits. Recommended for use in 5 to 10 Watt audio

amplifiers utilizing complementary symmetry circuitry.

http://onsemi.com

Features

• DC Current Gain − h = 40 (Min) @ I

4 AMPERES

POWER TRANSISTORS

NPN SILICON

= 1.0 Adc

• Complementary to PNP MJE371

• Pb−Free Package is Available*

40 VOLTS, 40 WATTS

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

Collector−Emitter Voltage

Collector−Base Voltage

Emitter Base Voltage

CEO

TO−225

CASE 77

STYLE 1

4.0

Collector Current − Continuous

− Peak

4.0

8.0

Base Current

− Continuous

2.0

Adc

Total Power Dissipation @ T = 25_C

0.32

Derate above 25_C

mW/_C

MARKING DIAGRAM

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

YWW

JE521G

Thermal Resistance, Junction−to−Case

3.12

_C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

= Year

= Work Week

JE521 = Device Code

= Pb−Free Package

ORDERING INFORMATION

Device

Package

Shipping

MJE521

TO−225

500 Units/Box

TO−225

MJE521G

(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

February, 2006 − Rev. 5

MJE521/D

12 3 4

中文翻译

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MJE521G 替代型号

型号	品牌	替代类型	描述	数据表
MJE521	ONSEMI	完全替代	POWER TRANSISTOR NPN SILICON
MJE521	STMICROELECTRONICS	功能相似	SILICON NPN TRANSISTOR

与MJE521G相关器件

型号	品牌	获取价格	描述	数据表
MJE521LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
MJE52T	ISC	获取价格	isc Silicon NPN Power Transistor
MJE53T	ISC	获取价格	isc Silicon NPN Power Transistor
MJE5420Z16	MOTOROLA	获取价格	10A, 20V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE5420Z16A	MOTOROLA	获取价格	10 A, 20 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE5420ZA	MOTOROLA	获取价格	10A, 20V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE5420ZAF	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE5420ZAJ	MOTOROLA	获取价格	10A, 20V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE5420ZC	MOTOROLA	获取价格	10A, 20V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE5420ZD1	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast

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