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MJE18009BV

更新时间： 2024-11-15 08:28:43
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
66页 512K
描述
TRANSISTOR 10 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

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MJE18009BV 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：PLASTIC, TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.92
外壳连接：COLLECTOR最大集电极电流 (IC)：10 A
集电极-发射极最大电压：450 V配置：SINGLE
最小直流电流增益 (hFE)：7JESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：NO端子面层：TIN LEAD
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：12 MHz

MJE18009BV 数据手册

 浏览型号MJE18009BV的Datasheet PDF文件第2页浏览型号MJE18009BV的Datasheet PDF文件第3页浏览型号MJE18009BV的Datasheet PDF文件第4页浏览型号MJE18009BV的Datasheet PDF文件第5页浏览型号MJE18009BV的Datasheet PDF文件第6页浏览型号MJE18009BV的Datasheet PDF文件第7页 
SEMICONDUCTOR TECHNICAL DATA  
POWER TRANSISTORS  
10 AMPERES  
The MJE/MJF18009 has an application specific state–of–the–art die designed for  
use in 220 V line–operated Switchmode Power supplies and electronic ballast (“light  
ballast”). These high voltage/high speed transistors exhibit the following main  
features:  
1000 VOLTS  
50 and 150 WATTS  
•
Improved Efficiency Due to Low Base Drive Requirements:  
— High and Flat DC Current Gain h  
— Fast Switching  
FE  
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)  
Full Characterization at 125 C  
Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric  
Distributions  
•
•
•
•
Specified Dynamic Saturation Data  
Two Package Choices: Standard TO–220 or Isolated TO–220  
MAXIMUM RATINGS  
Rating  
Symbol MJE18009 MJF18009  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Sustaining Voltage  
Collector–Emitter Breakdown Voltage  
Collector–Base Breakdown Voltage  
Emitter–Base Voltage  
V
450  
1000  
1000  
9
CEO  
V
CES  
CBO  
EBO  
V
V
Collector Current — Continuous  
— Peak (1)  
I
10  
20  
C
CASE 221A–06  
TO–220AB  
I
CM  
Base Current — Continuous  
— Peak (1)  
I
4
8
Adc  
B
I
BM  
*Total Device Dissipation @ T = 25°C  
*Derate above 25 C  
P
D
150  
1.2  
50  
0.4  
Watt  
W/ C  
C
Operating and Storage Temperature  
T , T  
stg  
–65 to 150  
4500  
C
V
J
RMS Isolation Voltage (2)  
Per Figure 22  
V
ISOL1  
ISOL2  
ISOL3  
(1s, 25°C, Humidity ≤ 30%)  
Per Figure 23  
Per Figure 24  
V
V
3500  
1500  
T
C
= 25°C  
THERMAL CHARACTERISTICS  
Rating  
Symbol MJE18009 MJF18009  
Unit  
Thermal Resistance — Junction to Case  
— Junction to Ambient  
R
θJC  
R
θJA  
0.83  
62.5  
2.5  
62.5  
C/W  
CASE 221D–02  
Maximum Lead Temperature for Soldering  
Purposes: 1/8″ from Case for 5 Seconds  
T
L
260  
C
TO–220 FULLPACK  
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle  
10%.  
(2) Proper strike and creepage distance must be provided.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
3–750  
Motorola Bipolar Power Transistor Device Data  
1234567...66

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