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MJE172STU PDF预览

MJE172STU

更新时间: 2024-11-29 11:12:03
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
7页 168K
描述
3.0 A, 80 V PNP Bipolar Power Transistor

MJE172STU 技术参数

是否无铅: 不含铅生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95Factory Lead Time:1 week
风险等级:7.03Samacsys Description:Transistor, Fairchild, MJE172STU Fairchild MJE172STU PNP Bipolar Transistor, -3 A, -80 V, 3-Pin TO-126
最大集电极电流 (IC):3 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):12
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):1.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz

MJE172STU 数据手册

 浏览型号MJE172STU的Datasheet PDF文件第2页浏览型号MJE172STU的Datasheet PDF文件第3页浏览型号MJE172STU的Datasheet PDF文件第4页浏览型号MJE172STU的Datasheet PDF文件第5页浏览型号MJE172STU的Datasheet PDF文件第6页浏览型号MJE172STU的Datasheet PDF文件第7页 
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MJE172STU 替代型号

型号 品牌 替代类型 描述 数据表
MJE172 ONSEMI

完全替代

POWER TRANSISTORS COMPLEMENTARY SILICON
MJE172G ONSEMI

类似代替

Complementary Plastic Silicon Power Transistors 40 − 60 − 80 VOLTS 12.5 WATTS

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