Datasheet > MJE18002

MJE18002

更新时间： 2024-11-28 10:55:47

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	43K
描述
Silicon NPN Power Transistors

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中文翻译

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MJE18002 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

MJE18002

DESCRIPTION

·With TO-220 package

·High voltage ,high speed

APPLICATIONS

·Designed for use in 220V line-operated

switchmode power supplies and electronic

light ballast

PINNING

DESCRIPTION

Base

Collector

Emitter

Absolute maximum ratings(Tc=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current-Peak

Base current

CONDITIONS

Open emitter

VALUE

1000

450

UNIT

Open base

Open collector

I_CM

I_B

0.5

I_BM

Base current-Peak

1.0

P_D

Total power dissipation

Junction temperature

Storage temperature

T_C=25℃

100

150

-65~150

℃

T_j

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance junction to case

Thermal resistance junction to ambient

MAX

1.25

62.5

UNIT

℃/W

R_{th j-C}

R_{th j-A}

12 3

中文翻译

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与MJE18002相关器件

型号	品牌	获取价格	描述	数据表
MJE1800216	MOTOROLA	获取价格	2A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE1800216A	MOTOROLA	获取价格	2 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE18002A	MOTOROLA	获取价格	2A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE18002AF	MOTOROLA	获取价格	2A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE18002AJ	MOTOROLA	获取价格	Power Bipolar Transistor, 2A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE18002BG	ONSEMI	获取价格	2A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE18002C	MOTOROLA	获取价格	2A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE18002D1	MOTOROLA	获取价格	Power Bipolar Transistor, 2A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE18002D2	MOTOROLA	获取价格	POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS
MJE18002D2	ONSEMI	获取价格	POWER TRANSISTORS