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MJE18002D2BS PDF预览

MJE18002D2BS

更新时间： 2024-11-06 12:58:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
4页 155K
描述
TRANSISTOR 2 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

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MJE18002D2BS 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：PLASTIC, TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.81
其他特性：BUILT-IN EFFICIENT ANTISATURATION NETWORK外壳连接：COLLECTOR
最大集电极电流 (IC)：2 A集电极-发射极最大电压：450 V
配置：SINGLE WITH BUILT-IN DIODE最小直流电流增益 (hFE)：6
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：NO
端子面层：TIN LEAD端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管元件材料：SILICON标称过渡频率 (fT)：13 MHz
Base Number Matches：1

MJE18002D2BS 数据手册

 浏览型号MJE18002D2BS的Datasheet PDF文件第2页浏览型号MJE18002D2BS的Datasheet PDF文件第3页浏览型号MJE18002D2BS的Datasheet PDF文件第4页 
Order this document  
by MJE18002D2/D  
SEMICONDUCTOR TECHNICAL DATA  
POWER TRANSISTORS  
2 AMPERES  
1000 VOLTS  
50 WATTS  
The MJE18002D2 use a newly developed technology, so called H2BIP*, to design  
the state of art transistor dedicated to the Electronic Light Ballast and PFC** circuit.  
The main advantages brought by these new transistors are:  
•
•
•
•
Improved Global Efficiency Due to the Low Base Drive Requirements  
DC Current Gain Typically Centered at 45  
Extremely Low Storage Time Variation, Thanks to the Antisaturation Network  
Easy to Use Thanks to the Integrated Collector/Emitter Diode  
The MOTOROLA “Sig Sixma” philosophy provides tight and reproductible  
parameter distribution.  
*High speed High gain BIPolar transistor  
**Power Factor Control  
CASE 221A–06  
TO–220AB  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
450  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Sustaining Voltage  
Collector–Base Breakdown Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Voltage  
V
V
CEO  
1000  
1000  
12  
CBO  
V
V
CES  
EBO  
Collector Current — Continuous  
— Peak (1)  
I
C
2
5
I
CM  
Base Current — Continuous  
Base Current — Peak (1)  
I
1
2
Adc  
B
I
BM  
*Total Device Dissipation @ T = 25 C  
C
*Derate above 25°C  
P
D
50  
0.4  
Watt  
W/ C  
Operating and Storage Temperature  
T , T  
–65 to 150  
C
J
stg  
THERMAL CHARACTERISTICS  
Thermal Resistance — Junction to Case  
Thermal Resistance — Junction to Ambient  
R
R
2.5  
62.5  
C/W  
C
θJC  
θJA  
Maximum Lead Temperature for Soldering Purposes:  
1/8″ from case for 5 seconds  
T
260  
L
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.  
This document contains information on a new product. Specifications and information herein are subject to change without notice.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
Motorola, Inc. 1995
1234

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与MJE18002D2BS相关器件

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MJE18002D2BV ONSEMI

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 		2A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE18002D2DW ONSEMI

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 		TRANSISTOR 2 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE18002G ONSEMI

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 		SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications
MJE18002L MOTOROLA

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 		2 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE18002N MOTOROLA

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 		Power Bipolar Transistor, 2A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE18002S MOTOROLA

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 		Power Bipolar Transistor, 2A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE18002T MOTOROLA

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 		Power Bipolar Transistor, 2A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE18002U MOTOROLA

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 		2A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE18002U2 MOTOROLA

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 		2A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE18002W MOTOROLA

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 		Power Bipolar Transistor, 2A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast

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