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MJE18002N PDF预览

MJE18002N

更新时间: 2024-11-06 13:11:35
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
10页 257K
描述
Power Bipolar Transistor, 2A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

MJE18002N 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.74外壳连接:COLLECTOR
最大集电极电流 (IC):2 A集电极-发射极最大电压:450 V
配置:SINGLE最小直流电流增益 (hFE):14
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
功耗环境最大值:40 W认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):12 MHz
最大关闭时间(toff):3170 nsBase Number Matches:1

MJE18002N 数据手册

 浏览型号MJE18002N的Datasheet PDF文件第2页浏览型号MJE18002N的Datasheet PDF文件第3页浏览型号MJE18002N的Datasheet PDF文件第4页浏览型号MJE18002N的Datasheet PDF文件第5页浏览型号MJE18002N的Datasheet PDF文件第6页浏览型号MJE18002N的Datasheet PDF文件第7页 
Order this document  
by MJE18002/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Bipolar Power Transistor  
For Switching Power Supply Applications  
*Motorola Preferred Device  
The MJE/MJF18002 have an applications specific state–of–the–art die designed  
for use in 220 V line operated Switchmode Power supplies and electronic light  
ballasts. These high voltage/high speed transistors offer the following:  
POWER TRANSISTOR  
2.0 AMPERES  
1000 VOLTS  
Improved Efficiency Due to Low Base Drive Requirements:  
25 and 50 WATTS  
— High and Flat DC Current Gain h  
— Fast Switching  
FE  
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)  
Tight Parametric Distributions are Consistent Lot–to–Lot  
Two Package Choices: Standard TO–220 or Isolated TO–220  
MJF18002, Case 221D, is UL Recognized at 3500 V  
: File #E69369  
RMS  
MAXIMUM RATINGS  
Rating  
Symbol MJE18002 MJF18002  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Sustaining Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Voltage  
V
450  
1000  
9.0  
CEO  
V
CES  
EBO  
V
CASE 221A–06  
TO–220AB  
MJE18002  
Collector Current — Continuous  
— Peak(1)  
I
2.0  
5.0  
C
I
CM  
Base Current — Continuous  
— Peak(1)  
I
1.0  
2.0  
Adc  
V
B
I
BM  
RMS Isolated Voltage(2)  
(for 1 sec, R.H. < 30%,  
Test No. 1 Per Fig. 1  
Test No. 2 Per Fig. 2  
Test No. 3 Per Fig. 3  
V
4500  
3500  
1500  
ISOL  
T
C
= 25°C)  
Total Device Dissipation  
Derate above 25°C  
(T = 25°C)  
C
P
D
50  
0.4  
25  
0.2  
Watts  
W/°C  
Operating and Storage Temperature  
T , T  
J stg  
65 to 150  
°C  
THERMAL CHARACTERISTICS  
Rating  
Symbol MJE18002 MJF18002  
Unit  
CASE 221D–02  
ISOLATED TO–220 TYPE  
UL RECOGNIZED  
MJF18002  
Thermal Resistance — Junction to Case  
— Junction to Ambient  
R
θJC  
R
θJA  
2.5  
62.5  
5.0  
62.5  
°C/W  
Maximum Lead Temperature for Soldering  
Purposes: 1/8from Case for 5 Seconds  
T
L
260  
°C  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)  
V
450  
Vdc  
µAdc  
µAdc  
C
CEO(sus)  
Collector Cutoff Current (V  
= Rated V  
, I = 0)  
B
I
CEO  
100  
CE  
CEO  
Collector Cutoff Current (V  
Collector Cutoff Current (V  
= Rated V  
= 800 V, V  
, V  
= 0)  
T
C
T
C
= 125°C  
= 125°C  
I
100  
500  
100  
CE  
CE  
CES EB  
= 0)  
CES  
EB  
Emitter Cutoff Current (V  
EB  
= 9.0 Vdc, I = 0)  
I
100  
µAdc  
C
EBO  
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.  
(continued)  
(2) Proper strike and creepage distance must be provided.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
REV 1  
Motorola, Inc. 1995

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