5秒后页面跳转
捷配首页

Datasheet > MJE18004D2BA
MJE18004D2BA PDF预览

MJE18004D2BA

更新时间： 2024-11-09 19:43:47
品牌 Logo 应用领域
安森美 - ONSEMI 局域网晶体管
页数 文件大小 规格书
11页 185K
描述
5A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

阅读下载

中文翻译

获取价格

MJE18004D2BA 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：PLASTIC, TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.81
其他特性：BUILT-IN EFFICIENT ANTISATURATION NETWORK外壳连接：COLLECTOR
最大集电极电流 (IC)：5 A集电极-发射极最大电压：450 V
配置：SINGLE WITH BUILT-IN DIODE最小直流电流增益 (hFE)：6
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：NO
端子面层：TIN LEAD端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管元件材料：SILICON标称过渡频率 (fT)：13 MHz
Base Number Matches：1

MJE18004D2BA 数据手册

 浏览型号MJE18004D2BA的Datasheet PDF文件第2页浏览型号MJE18004D2BA的Datasheet PDF文件第3页浏览型号MJE18004D2BA的Datasheet PDF文件第4页浏览型号MJE18004D2BA的Datasheet PDF文件第5页浏览型号MJE18004D2BA的Datasheet PDF文件第6页浏览型号MJE18004D2BA的Datasheet PDF文件第7页 
MJE18004G, MJF18004G  
SWITCHMODE  
NPN Bipolar Power Transistor  
For Switching Power Supply Applications  
The MJE/MJF18004G have an applications specific state−of−the−art  
die designed for use in 220 V line−operated SWITCHMODE Power  
supplies and electronic light ballasts.  
http://onsemi.com  
Features  
POWER TRANSISTOR  
5.0 AMPERES  
• Improved Efficiency Due to Low Base Drive Requirements:  
♦ High and Flat DC Current Gain h  
FE  
♦ Fast Switching  
♦ No Coil Required in Base Circuit for Turn−Off (No Current Tail)  
1000 VOLTS  
35 and 75 WATTS  
• Full Characterization at 125_C  
• ON Semiconductor Six Sigma Philosophy Provides Tight and  
Reproducible Parametric Distributions  
COLLECTOR  
2,4  
• Two Package Choices: Standard TO−220 or Isolated TO−220  
• MJF18004, Case 221D, is UL Recognized at 3500 V  
: File  
RMS  
1
#E69369  
BASE  
• These Devices are Pb−Free and are RoHS Compliant*  
3
MAXIMUM RATINGS  
EMITTER  
Rating  
Symbol  
Value  
450  
1000  
9.0  
Unit  
MARKING  
DIAGRAMS  
Collector−Emitter Sustaining Voltage  
Collector−Base Breakdown Voltage  
Emitter−Base Voltage  
V
CEO  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Adc  
Adc  
V
V
CES  
EBO  
4
V
Collector Current − Continuous  
Collector Current − Peak (Note 1)  
I
C
5.0  
I
10  
MJE18004G  
AYWW  
CM  
Base Current  
Base Current  
− Continuous  
I
B
2.0  
TO−220AB  
CASE 221A−09  
STYLE 1  
− Peak (Note 1)  
I
4.0  
BM  
1
2
RMS Isolation Voltage (Note 2)  
V
ISOL  
MJF18004  
4500  
3
Test No. 1 Per Figure 22a  
Test No. 2 Per Figure 22b  
Test No. 3 Per Figure 22c  
3500  
1500  
(for 1 sec, R.H. < 30%, T = 25_C)  
A
Total Device Dissipation @ T = 25_C  
P
D
W
W/_C  
C
MJE18004  
MJF18004  
MJE18004  
MJF18004  
75  
35  
0.6  
0.28  
TO−220 FULLPACK  
CASE 221D  
MJF18004G  
AYWW  
Derate above 25°C  
STYLE 2  
UL RECOGNIZED  
1
Operating and Storage Temperature  
T , T  
−65 to 150  
_C  
J
stg  
2
3
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max  
Unit  
G
A
Y
= Pb−Free Package  
= Assembly Location  
= Year  
Thermal Resistance, Junction−to−Case  
R
_C/W  
q
JC  
MJE18004  
MJF18004  
1.65  
3.55  
WW  
= Work Week  
Thermal Resistance, Junction−to−Ambient  
R
62.5  
260  
_C/W  
_C  
q
JA  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 8 of this data sheet.  
Maximum Lead Temperature for Soldering  
Purposes 1/8″ from Case for 5 Seconds  
T
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.  
*For additional information on our Pb−Free strategy  
and soldering details, please download the  
ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
2. Proper strike and creepage distance must be provided.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
August, 2013 − Rev. 11  
MJE18004/D  
 
1234567...11

中文翻译

下载PDF

与MJE18004D2BA相关器件

型号 品牌 获取价格 描述 数据表
MJE18004D2BC ONSEMI

获取价格

 		5A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE18004D2BD ONSEMI

获取价格

 		5A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE18004D2BG ONSEMI

获取价格

 		5A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE18004D2BS ONSEMI

获取价格

 		暂无描述
MJE18004D2BU ONSEMI

获取价格

 		TRANSISTOR 5 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE18004D2BV ONSEMI

获取价格

 		暂无描述
MJE18004D2DW ONSEMI

获取价格

 		TRANSISTOR 5 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE18004D2G ONSEMI

获取价格

 		High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode
MJE18004G ONSEMI

获取价格

 		NPN Bipolar Power Transistor For Switching Power Supply Applications
MJE18004L MOTOROLA

获取价格

 		Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast

与MJE18004D2BA相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证