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MJE18006AN PDF预览

MJE18006AN

更新时间： 2024-11-26 13:11:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关局域网
页数 文件大小 规格书
10页 417K
描述
6A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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中文翻译

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MJE18006AN 技术参数

是否Rohs认证：不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：PLASTIC, TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.8
Is Samacsys：N外壳连接：COLLECTOR
最大集电极电流 (IC)：6 A集电极-发射极最大电压：450 V
配置：SINGLE最小直流电流增益 (hFE)：6
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：NO
端子面层：TIN LEAD端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：14 MHzBase Number Matches：1

MJE18006AN 数据手册

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Order this document  
by MJE18006/D  
SEMICONDUCTOR TECHNICAL DATA  
*Motorola Preferred Device  
NPN Bipolar Power Transistor  
For Switching Power Supply Applications  
The MJE/MJF18006 have an applications specific state–of–the–art die designed  
for use in 220 V line–operated Switchmode Power supplies and electronic light  
ballasts. These high voltage/high speed transistors offer the following:  
POWER TRANSISTOR  
6.0 AMPERES  
1000 VOLTS  
40 and 100 WATTS  
•
Improved Efficiency Due to Low Base Drive Requirements:  
— High and Flat DC Current Gain h  
— Fast Switching  
FE  
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)  
Tight Parametric Distributions are Consistent Lot–to–Lot  
Two Package Choices: Standard TO–220 or Isolated TO–220  
•
•
•
MJF18006, Case 221D, is UL Recognized at 3500 V  
: File #E69369  
RMS  
MAXIMUM RATINGS  
Rating  
Symbol MJE18006 MJF18006  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Sustaining Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Voltage  
V
450  
1000  
9.0  
CEO  
V
CES  
EBO  
CASE 221A–06  
TO–220AB  
MJE18006  
V
Collector Current — Continuous  
— Peak(1)  
I
6.0  
15  
C
I
CM  
Base Current — Continuous  
— Peak(1)  
I
4.0  
8.0  
Adc  
B
I
BM  
RMS Isolation Voltage(2) Test No. 1 Per Fig. 22a  
(for 1 sec, R.H. < 30%, Test No. 1 Per Fig. 22b  
V
ISOL  
—
—
—
4500  
3500  
1500  
Volts  
T
C
= 25 C)  
Test No. 1 Per Fig. 22c  
Total Device Dissipation  
Derate above 25 C  
(T = 25°C)  
C
P
D
100  
0.8  
40  
0.32  
Watts  
W/ C  
Operating and Storage Temperature  
T , T  
J stg  
–65 to 150  
C
THERMAL CHARACTERISTICS  
Rating  
Symbol MJE18006 MJF18006  
Unit  
CASE 221D–02  
ISOLATED TO–220 TYPE  
UL RECOGNIZED  
MJF18006  
Thermal Resistance — Junction to Case  
— Junction to Ambient  
R
R
1.25  
62.5  
3.125  
62.5  
C/W  
θJC  
θJA  
Maximum Lead Temperature for Soldering  
Purposes: 1/8″ from Case for 5 Seconds  
T
260  
C
L
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)  
V
450  
—
—
—
—
Vdc  
µAdc  
µAdc  
C
CEO(sus)  
Collector Cutoff Current (V  
= Rated V  
, I = 0)  
I
CEO  
100  
CE  
CE  
CEO  
B
Collector Cutoff Current (V  
= Rated V  
, V  
= 0)  
I
—
—
—
—
—
—
100  
500  
100  
CES EB  
CES  
(T = 125 C)  
C
Collector Cutoff Current (V  
= 800 V, V  
= 0)  
(T = 125 C)  
C
CE  
EB  
Emitter Cutoff Current (V  
EB  
= 9.0 Vdc, I = 0)  
I
—
—
100  
µAdc  
C
EBO  
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle  
10%.  
(continued)  
(2) Proper strike and creepage distance must be provided.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
REV 1  
Motorola, Inc. 1995
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与MJE18006AN相关器件

型号 品牌 获取价格 描述 数据表
MJE18006BG ONSEMI

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 		6A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE18006C MOTOROLA

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 		8A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE18006D1 MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE18006G ONSEMI

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 		NPN Bipolar Power Transistor For Switching Power Supply Applications
MJE18006G ROCHESTER

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 		6A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB, ROHS COMPLIANT, CASE 221A-09, 3 PIN
MJE18006L MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE18006N MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE18006S MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE18006T MOTOROLA

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 		8A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE18006U2 MOTOROLA

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 		8A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB

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