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MJE18008G

更新时间： 2024-11-14 10:55:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体开关晶体管功率双极晶体管PC局域网
页数 文件大小 规格书
10页 225K
描述
NPN Bipolar Power Transistor For Switching Power Supply Applications

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中文翻译

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MJE18008G 技术参数

是否无铅：不含铅生命周期：Active
零件包装代码：TO-220AB包装说明：ROHS COMPLIANT, CASE 221A-09, 3 PIN
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：0.85Samacsys Confidence：3
Samacsys Status：ReleasedSamacsys PartID：225707
Samacsys Pin Count：3Samacsys Part Category：Transistor
Samacsys Package Category：Transistor Outline, VerticalSamacsys Footprint Name：TO-220 CASE221A-09
Samacsys Released Date：2015-11-03 12:30:39Is Samacsys：N
其他特性：LEADFORM OPTIONS ARE AVAILABLE外壳连接：COLLECTOR
最大集电极电流 (IC)：8 A集电极-发射极最大电压：450 V
配置：SINGLE最小直流电流增益 (hFE)：6
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：125 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：13 MHz
Base Number Matches：1

MJE18008G 数据手册

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MJE18008G, MJF18008G  
SWITCHMODEt  
NPN Bipolar Power Transistor  
For Switching Power Supply Applications  
The MJE/MJF18008G have an applications specific state−of−the−art  
die designed for use in 220 V line−operated SWITCHMODE Power  
supplies and electronic light ballasts.  
http://onsemi.com  
Features  
POWER TRANSISTOR  
8.0 AMPERES  
• Improved Efficiency Due to Low Base Drive Requirements:  
♦ High and Flat DC Current Gain h  
♦ Fast Switching  
FE  
1000 VOLTS  
45 and 125 WATTS  
♦ No Coil Required in Base Circuit for Turn−Off (No Current Tail)  
• Tight Parametric Distributions are Consistent Lot−to−Lot  
• Two Package Choices: Standard TO−220 or Isolated TO−220  
MARKING  
DIAGRAMS  
• MJF18008, Case 221D, is UL Recognized at 3500 V  
: File  
RMS  
#E69369  
• These Devices are Pb−Free and are RoHS Compliant*  
MAXIMUM RATINGS  
MJE18008G  
AYWW  
Rating  
Symbol  
Value  
450  
Unit  
TO−220AB  
CASE 221A−09  
STYLE 1  
Collector−Emitter Sustaining Voltage  
Collector−Base Breakdown Voltage  
Emitter−Base Voltage  
V
CEO  
Vdc  
Vdc  
Vdc  
Adc  
1
V
1000  
9.0  
CES  
EBO  
2
3
V
Collector Current − Continuous  
− Peak (Note 1)  
I
8.0  
16  
C
I
I
CM  
Base Current  
− Continuous  
− Peak (Note 1)  
I
4.0  
8.0  
Adc  
V
B
BM  
RMS Isolation Voltage (Note 2)  
Test No. 1 Per Figure 22a  
V
ISOL  
MJF18008  
4500  
MJF18008G  
AYWW  
Test No. 1 Per Figure 22b  
Test No. 1 Per Figure 22c  
(for 1 sec, R.H. < 30%, T = 25_C)  
Total Device Dissipation @ T = 25_C  
3500  
1500  
TO−220 FULLPACK  
CASE 221D  
STYLE 2  
UL RECOGNIZED  
A
1
2
P
D
W
W/_C  
C
3
MJE18008  
MJF18008  
MJE18008  
MJF18008  
125  
45  
1.0  
0.36  
Derate above 25°C  
G
A
Y
= Pb−Free Package  
= Assembly Location  
= Year  
Operating and Storage Temperature  
T , T  
−65 to 150  
_C  
J
stg  
THERMAL CHARACTERISTICS  
WW  
= Work Week  
Characteristics  
Symbol  
Max  
Unit  
Thermal Resistance, Junction−to−Case  
R
q
JC  
_C/W  
MJE18008  
1.0  
2.78  
MJF18008  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 7 of this data sheet.  
Thermal Resistance, Junction−to−Ambient  
R
62.5  
260  
_C/W  
_C  
q
JA  
Maximum Lead Temperature for Soldering  
Purposes 1/8″ from Case for 5 Seconds  
T
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.  
*For additional information on our Pb−Free strategy  
and soldering details, please download the  
ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
2. Proper strike and creepage distance must be provided.  
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
April, 2010 − Rev. 7  
MJE18008/D  
 
1234567...10

中文翻译

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MJE18008G 替代型号

型号 品牌 替代类型 描述 数据表
MJE18008 ONSEMI

完全替代

 POWER TRANSISTOR
BUT12AI,127 NXP

功能相似

 BUT12AI
BUL510 STMICROELECTRONICS

功能相似

 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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