Datasheet > MJE18009AF

MJE18009AF

更新时间： 2024-11-15 08:13:15

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
66页	512K
描述
10A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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MJE18009AF 数据手册

SEMICONDUCTOR TECHNICAL DATA

POWER TRANSISTORS

10 AMPERES

The MJE/MJF18009 has an application specific state–of–the–art die designed for

use in 220 V line–operated Switchmode Power supplies and electronic ballast (“light

ballast”). These high voltage/high speed transistors exhibit the following main

features:

1000 VOLTS

50 and 150 WATTS

•

Improved Efficiency Due to Low Base Drive Requirements:

— High and Flat DC Current Gain h

— Fast Switching

— No Coil Required in Base Circuit for Turn–Off (No Current Tail)

Full Characterization at 125 C

Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric

Distributions

•

Specified Dynamic Saturation Data

Two Package Choices: Standard TO–220 or Isolated TO–220

MAXIMUM RATINGS

Rating

Symbol MJE18009 MJF18009

Unit

Vdc

Adc

Collector–Emitter Sustaining Voltage

Collector–Emitter Breakdown Voltage

Collector–Base Breakdown Voltage

Emitter–Base Voltage

450

1000

CEO

CES

CBO

EBO

Collector Current — Continuous

— Peak (1)

CASE 221A–06

TO–220AB

Base Current — Continuous

— Peak (1)

Adc

*Total Device Dissipation @ T = 25°C

*Derate above 25 C

150

1.2

0.4

Watt

W/ C

Operating and Storage Temperature

T , T

stg

–65 to 150

4500

RMS Isolation Voltage (2)

Per Figure 22

ISOL1

ISOL2

ISOL3

(1s, 25°C, Humidity ≤ 30%)

Per Figure 23

Per Figure 24

3500

1500

= 25°C

THERMAL CHARACTERISTICS

Rating

Symbol MJE18009 MJF18009

Unit

Thermal Resistance — Junction to Case

— Junction to Ambient

θJC

θJA

0.83

62.5

2.5

62.5

C/W

CASE 221D–02

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

260

TO–220 FULLPACK

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

10%.

(2) Proper strike and creepage distance must be provided.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

3–750

Motorola Bipolar Power Transistor Device Data

12 3 4 5 6 7...66

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与MJE18009AF相关器件

型号	品牌	获取价格	描述	数据表
MJE18009AK	ONSEMI	获取价格	10A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE18009AN	ONSEMI	获取价格	TRANSISTOR 10 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General P
MJE18009AS	ONSEMI	获取价格	10A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE18009AU	ONSEMI	获取价格	10A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE18009BA	ONSEMI	获取价格	10A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE18009BC	ONSEMI	获取价格	TRANSISTOR 10 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General P
MJE18009BD	ONSEMI	获取价格	10A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE18009BG	ONSEMI	获取价格	10A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE18009BS	ONSEMI	获取价格	10A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE18009BU	ONSEMI	获取价格	10A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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