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MJE18008

更新时间： 2024-11-25 22:46:15
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管局域网
页数 文件大小 规格书
10页 424K
描述
POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS

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MJE18008 技术参数

生命周期：Transferred包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknown风险等级：5.3
其他特性：LEADFORM OPTIONS ARE AVAILABLE外壳连接：COLLECTOR
最大集电极电流 (IC)：8 A基于收集器的最大容量：150 pF
集电极-发射极最大电压：450 V配置：SINGLE
最小直流电流增益 (hFE)：6JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：NPN功耗环境最大值：125 W
最大功率耗散 (Abs)：125 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：13 MHz
最大关闭时间（toff）：2500 ns最大开启时间（吨）：180 ns
VCEsat-Max：0.7 VBase Number Matches：1

MJE18008 数据手册

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Order this document  
by MJE18008/D  
SEMICONDUCTOR TECHNICAL DATA  
*Motorola Preferred Device  
NPN Bipolar Power Transistor  
For Switching Power Supply Applications  
The MJE/MJF18008 have an applications specific state–of–the–art die designed  
for use in 220 V line–operated Switchmode Power supplies and electronic light  
ballasts. These high voltage/high speed transistors offer the following:  
POWER TRANSISTOR  
8.0 AMPERES  
1000 VOLTS  
45 and 125 WATTS  
•
Improved Efficiency Due to Low Base Drive Requirements:  
— High and Flat DC Current Gain h  
— Fast Switching  
FE  
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)  
Tight Parametric Distributions are Consistent Lot–to–Lot  
Two Package Choices: Standard TO–220 or Isolated TO–220  
•
•
•
MJF18008, Case 221D, is UL Recognized at 3500 V  
: File #E69369  
RMS  
MAXIMUM RATINGS  
Rating  
Symbol MJE18008 MJF18008  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Sustaining Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Voltage  
V
450  
1000  
9.0  
CEO  
V
CES  
EBO  
CASE 221A–06  
TO–220AB  
MJE18008  
V
Collector Current — Continuous  
— Peak(1)  
I
8.0  
16  
C
I
CM  
Base Current — Continuous  
— Peak(1)  
I
4.0  
8.0  
Adc  
B
I
BM  
RMS Isolation Voltage(2) Test No. 1 Per Fig. 22a  
(for 1 sec, R.H. < 30%, Test No. 1 Per Fig. 22b  
V
ISOL  
—
—
—
4500  
3500  
1500  
Volts  
T
C
= 25 C)  
Test No. 1 Per Fig. 22c  
C
Total Device Dissipation  
Derate above 25 C  
(T = 25°C)  
P
D
125  
1.0  
45  
0.36  
Watts  
W/ C  
Operating and Storage Temperature  
T , T  
J stg  
–65 to 150  
C
THERMAL CHARACTERISTICS  
Rating  
Symbol MJE18008 MJF18008  
Unit  
CASE 221D–02  
ISOLATED TO–220 TYPE  
UL RECOGNIZED  
MJF18008  
Thermal Resistance — Junction to Case  
— Junction to Ambient  
R
R
1.0  
62.5  
2.78  
62.5  
C/W  
θJC  
θJA  
Maximum Lead Temperature for Soldering  
Purposes: 1/8″ from Case for 5 Seconds  
T
260  
C
L
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)  
V
450  
—
—
—
—
Vdc  
µAdc  
µAdc  
C
CEO(sus)  
Collector Cutoff Current (V  
Collector Cutoff Current (V  
= Rated V  
, I = 0)  
I
CEO  
100  
CE  
CEO  
B
= Rated V  
, V  
= 0)  
I
—
—
—
—
—
—
100  
500  
100  
CE  
CES EB  
CES  
(T = 125 C)  
C
C
Collector Cutoff Current (V  
= 800 V, V  
= 0)  
(T = 125 C)  
CE  
EB  
Emitter Cutoff Current (V  
EB  
= 9.0 Vdc, I = 0)  
I
—
—
100  
µAdc  
C
EBO  
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle  
10%.  
(continued)  
(2) Proper strike and creepage distance must be provided.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
REV 1  
Motorola, Inc. 1995
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