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MJE18006G

更新时间： 2024-11-26 12:36:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体开关晶体管局域网
页数 文件大小 规格书
7页 191K
描述
NPN Bipolar Power Transistor For Switching Power Supply Applications

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中文翻译

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MJE18006G 技术参数

是否无铅： 不含铅生命周期：End Of Life
零件包装代码：TO-220AB包装说明：ROHS COMPLIANT, CASE 221A-09, 3 PIN
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.27
其他特性：LEADFORM OPTIONS ARE AVAILABLE外壳连接：COLLECTOR
最大集电极电流 (IC)：6 A集电极-发射极最大电压：450 V
配置：SINGLE最小直流电流增益 (hFE)：6
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：100 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：14 MHz
Base Number Matches：1

MJE18006G 数据手册

 浏览型号MJE18006G的Datasheet PDF文件第2页浏览型号MJE18006G的Datasheet PDF文件第3页浏览型号MJE18006G的Datasheet PDF文件第4页浏览型号MJE18006G的Datasheet PDF文件第5页浏览型号MJE18006G的Datasheet PDF文件第6页浏览型号MJE18006G的Datasheet PDF文件第7页 
MJE18006G  
SWITCHMODEt  
NPN Bipolar Power Transistor  
For Switching Power Supply Applications  
The MJE18006G has an applications specific state−of−the−art die  
designed for use in 220 V line−operated SWITCHMODE Power  
supplies and electronic light ballasts.  
http://onsemi.com  
POWER TRANSISTOR  
6.0 AMPERES  
1000 VOLTS − 100 WATTS  
Features  
• Improved Efficiency Due to Low Base Drive Requirements:  
♦ High and Flat DC Current Gain h  
♦ Fast Switching  
FE  
♦ No Coil Required in Base Circuit for Turn−Off (No Current Tail)  
• Tight Parametric Distributions are Consistent Lot−to−Lot  
• Standard TO−220  
• These Devices are Pb−Free and are RoHS Compliant*  
TO−220AB  
CASE 221A−09  
STYLE 1  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
450  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector−Emitter Sustaining Voltage  
Collector−Emitter Breakdown Voltage  
Emitter−Base Voltage  
V
CEO  
1
2
3
V
CES  
V
EBO  
1000  
9.0  
Collector Current − Continuous  
− Peak (Note 1)  
I
6.0  
15  
C
MARKING DIAGRAM  
I
CM  
Base Current  
− Continuous  
− Peak (Note 1)  
I
4.0  
8.0  
Adc  
B
I
BM  
Total Device Dissipation @ T = 25_C  
P
100  
0.8  
W
C
D
MJE18006G  
AY WW  
Derate above 25°C  
W/_C  
Operating and Storage Temperature  
THERMAL CHARACTERISTICS  
T , T  
J
−65 to 150  
_C  
stg  
Characteristics  
Symbol  
Max  
1.25  
62.5  
260  
Unit  
_C/W  
_C/W  
_C  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
A
Y
= Assembly Location  
= Year  
R
q
JA  
Maximum Lead Temperature for Soldering  
Purposes 1/8″ from Case for 5 Seconds  
T
WW = Work Week  
L
G
= Pb−Free Package  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
50 Units / Rail  
MJE18006G  
TO−220  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
April, 2010 − Rev. 7  
MJE18006/D  
 
1234567

中文翻译

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MJE18006G 替代型号

型号 品牌 替代类型 描述 数据表
MJE18006 ONSEMI

类似代替

 POWER TRANSISTOR
MJE18006 MOTOROLA

功能相似

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