MJE18006

更新时间： 2024-11-25 22:46:15

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管开关局域网
页数	文件大小	规格书
10页	417K
描述
POWER TRANSISTOR

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MJE18006 技术参数

是否无铅：	含铅	生命周期：	End Of Life
零件包装代码：	TO-220AB	包装说明：	CASE 221A-09, 3 PIN
针数：	3	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	风险等级：	5.27
其他特性：	LEADFORM OPTIONS ARE AVAILABLE	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	6 A	集电极-发射极最大电压：	450 V
配置：	SINGLE	最小直流电流增益 (hFE)：	6
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e0	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	峰值回流温度（摄氏度）：	240
极性/信道类型：	NPN	最大功率耗散 (Abs)：	100 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	30	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	14 MHz
Base Number Matches：	1

MJE18006 数据手册

Order this document

by MJE18006/D

SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

NPN Bipolar Power Transistor

For Switching Power Supply Applications

The MJE/MJF18006 have an applications specific state–of–the–art die designed

for use in 220 V line–operated Switchmode Power supplies and electronic light

ballasts. These high voltage/high speed transistors offer the following:

POWER TRANSISTOR

6.0 AMPERES

1000 VOLTS

40 and 100 WATTS

•

Improved Efficiency Due to Low Base Drive Requirements:

— High and Flat DC Current Gain h

— Fast Switching

— No Coil Required in Base Circuit for Turn–Off (No Current Tail)

Tight Parametric Distributions are Consistent Lot–to–Lot

Two Package Choices: Standard TO–220 or Isolated TO–220

•

MJF18006, Case 221D, is UL Recognized at 3500 V

: File #E69369

RMS

MAXIMUM RATINGS

Rating

Symbol MJE18006 MJF18006

Unit

Vdc

Adc

Collector–Emitter Sustaining Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

450

1000

9.0

CEO

CES

EBO

CASE 221A–06

TO–220AB

MJE18006

Collector Current — Continuous

— Peak(1)

6.0

Base Current — Continuous

— Peak(1)

4.0

8.0

Adc

RMS Isolation Voltage(2) Test No. 1 Per Fig. 22a

(for 1 sec, R.H. < 30%, Test No. 1 Per Fig. 22b

ISOL

—

4500

3500

1500

Volts

= 25 C)

Test No. 1 Per Fig. 22c

Total Device Dissipation

Derate above 25 C

(T = 25°C)

100

0.8

0.32

Watts

W/ C

Operating and Storage Temperature

T , T

J stg

–65 to 150

THERMAL CHARACTERISTICS

Rating

Symbol MJE18006 MJF18006

Unit

CASE 221D–02

ISOLATED TO–220 TYPE

UL RECOGNIZED

MJF18006

Thermal Resistance — Junction to Case

— Junction to Ambient

1.25

62.5

3.125

62.5

C/W

θJC

θJA

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

260

ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)

450

—

Vdc

µAdc

CEO(sus)

Collector Cutoff Current (V

= Rated V

, I = 0)

CEO

100

CEO

Collector Cutoff Current (V

= Rated V

, V

= 0)

—

100

500

100

CES EB

CES

(T = 125 C)

Collector Cutoff Current (V

= 800 V, V

= 0)

(T = 125 C)

Emitter Cutoff Current (V

= 9.0 Vdc, I = 0)

—

100

µAdc

EBO

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle

10%.

(continued)

(2) Proper strike and creepage distance must be provided.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

REV 1

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12 3 4 5 6 7...10

中文翻译

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MJE18006 替代型号

型号	品牌	替代类型	描述	数据表
MJE18006G	ONSEMI	类似代替	NPN Bipolar Power Transistor For Switching Power Supply Applications
2SD1138	RENESAS	功能相似	Silicon NPN Triple Diffused
2SD526	TOSHIBA	功能相似	NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

与MJE18006相关器件

型号	品牌	获取价格	描述	数据表
MJE1800616	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE1800616A	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE18006A	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE18006AF	MOTOROLA	获取价格	8A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE18006AJ	MOTOROLA	获取价格	8A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE18006AN	ONSEMI	获取价格	6A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE18006BG	ONSEMI	获取价格	6A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE18006C	MOTOROLA	获取价格	8A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE18006D1	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE18006G	ONSEMI	获取价格	NPN Bipolar Power Transistor For Switching Power Supply Applications

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