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MJE18006BG

更新时间： 2024-11-26 18:45:55
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
7页 193K
描述
6A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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中文翻译

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MJE18006BG 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：PLASTIC, TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.74
外壳连接：COLLECTOR最大集电极电流 (IC)：6 A
集电极-发射极最大电压：450 V配置：SINGLE
最小直流电流增益 (hFE)：6JESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：14 MHz
Base Number Matches：1

MJE18006BG 数据手册

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MJE18006G  
SWITCHMODEt  
NPN Bipolar Power Transistor  
For Switching Power Supply Applications  
The MJE18006G has an applications specific state−of−the−art die  
designed for use in 220 V line−operated SWITCHMODE Power  
supplies and electronic light ballasts.  
http://onsemi.com  
POWER TRANSISTOR  
6.0 AMPERES  
1000 VOLTS − 100 WATTS  
Features  
• Improved Efficiency Due to Low Base Drive Requirements:  
♦ High and Flat DC Current Gain h  
♦ Fast Switching  
FE  
♦ No Coil Required in Base Circuit for Turn−Off (No Current Tail)  
• Tight Parametric Distributions are Consistent Lot−to−Lot  
• Standard TO−220  
• These Devices are Pb−Free and are RoHS Compliant*  
TO−220AB  
CASE 221A−09  
STYLE 1  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
450  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector−Emitter Sustaining Voltage  
Collector−Emitter Breakdown Voltage  
Emitter−Base Voltage  
V
CEO  
1
2
3
V
CES  
V
EBO  
1000  
9.0  
Collector Current − Continuous  
− Peak (Note 1)  
I
6.0  
15  
C
MARKING DIAGRAM  
I
CM  
Base Current  
− Continuous  
− Peak (Note 1)  
I
4.0  
8.0  
Adc  
B
I
BM  
Total Device Dissipation @ T = 25_C  
P
100  
0.8  
W
C
D
MJE18006G  
AY WW  
Derate above 25°C  
W/_C  
Operating and Storage Temperature  
THERMAL CHARACTERISTICS  
T , T  
J
−65 to 150  
_C  
stg  
Characteristics  
Symbol  
Max  
1.25  
62.5  
260  
Unit  
_C/W  
_C/W  
_C  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
A
Y
= Assembly Location  
= Year  
R
q
JA  
Maximum Lead Temperature for Soldering  
Purposes 1/8″ from Case for 5 Seconds  
T
WW = Work Week  
L
G
= Pb−Free Package  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
50 Units / Rail  
MJE18006G  
TO−220  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
April, 2010 − Rev. 7  
MJE18006/D  
 
1234567

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 		Power Bipolar Transistor, 8A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE18006T MOTOROLA

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 		8A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE18006U2 MOTOROLA

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 		8A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE18006UA MOTOROLA

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 		8A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB

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