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MJE18006 PDF预览

MJE18006

更新时间: 2024-11-29 10:55:47
品牌 Logo 应用领域
SAVANTIC 晶体晶体管开关局域网
页数 文件大小 规格书
3页 101K
描述
Silicon NPN Power Transistors

MJE18006 数据手册

 浏览型号MJE18006的Datasheet PDF文件第2页浏览型号MJE18006的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
MJE18006  
DESCRIPTION  
·With TO-220C package  
·High voltage ,high speed  
APPLICATIONS  
·Designed for use in 220V line-operated  
switchmode power supplies and electronic  
light ballasts.  
PINNING  
PIN  
DESCRIPTION  
1
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
ABSOLUTE MAXIMUM RATINGS(TC=25ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current (DC)  
Collector current-Peak  
Base current  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
1000  
V
V
V
A
A
A
A
W
Open base  
450  
Open collector  
9
6
15  
ICM  
IB  
4
IBM  
Base current-Peak  
8
PD  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
100  
150  
-65~150  
Tj  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
Thermal resistance junction to ambient  
MAX  
1.25  
62.5  
UNIT  
/W  
/W  
Rth j-C  
Rth j-A  

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