MJE18004D2BV

更新时间： 2024-11-29 13:11:35

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
12页	468K
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SEMICONDUCTOR TECHNICAL DATA

POWER TRANSISTORS

5 AMPERES

1000 VOLTS

75 WATTS

The MJE18004D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).

High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time)

make it ideally suitable for light ballast applications. Therefore, there is no need to

guarantee an h

window.

Main features:

•

Low Base Drive Requirement

High Peak DC Current Gain (55 Typical) @ I = 100 mA

Extremely Low Storage Time Min/Max Guarantees Due to the

H2BIP Structure which Minimizes the Spread

•

Integrated Collector–Emitter Free Wheeling Diode

Fully Characterized and Guaranteed Dynamic V

CE(sat)

“6 Sigma” Process Providing Tight and Reproductible Parameter Spreads

It’s characteristics make it also suitable for PFC application.

CASE 221A–06

TO–220AB

MAXIMUM RATINGS

Rating

Symbol

Value

450

Unit

Vdc

Adc

Collector–Emitter Sustaining Voltage

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

CEO

1000

CBO

CES

EBO

Collector Current — Continuous

Collector Current — Peak (1)

Base Current — Continuous

Base Current — Peak (1)

Adc

*Total Device Dissipation @ T = 25 C

*Derate above 25°C

0.6

Watt

W/ C

Operating and Storage Temperature

T , T

–65 to 150

stg

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

1.65

62.5

C/W

θJC

θJA

Maximum Lead Temperature for Soldering Purposes:

1/8″ from case for 5 seconds

260

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6 7...12

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与MJE18004D2BV相关器件

型号	品牌	获取价格	描述	数据表
MJE18004D2DW	ONSEMI	获取价格	TRANSISTOR 5 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE18004D2G	ONSEMI	获取价格	High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode
MJE18004G	ONSEMI	获取价格	NPN Bipolar Power Transistor For Switching Power Supply Applications
MJE18004L	MOTOROLA	获取价格	Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE18004N	MOTOROLA	获取价格	Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE18004S	MOTOROLA	获取价格	Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE18004T	MOTOROLA	获取价格	5A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE18004U	MOTOROLA	获取价格	5A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE18004U2	MOTOROLA	获取价格	Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE18004UA	MOTOROLA	获取价格	Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast

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