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MJE18004D2AF PDF预览

MJE18004D2AF

更新时间: 2024-09-16 19:43:47
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安森美 - ONSEMI /
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11页 185K
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MJE18004D2AF 数据手册

 浏览型号MJE18004D2AF的Datasheet PDF文件第2页浏览型号MJE18004D2AF的Datasheet PDF文件第3页浏览型号MJE18004D2AF的Datasheet PDF文件第4页浏览型号MJE18004D2AF的Datasheet PDF文件第5页浏览型号MJE18004D2AF的Datasheet PDF文件第6页浏览型号MJE18004D2AF的Datasheet PDF文件第7页 
MJE18004G, MJF18004G  
SWITCHMODE  
NPN Bipolar Power Transistor  
For Switching Power Supply Applications  
The MJE/MJF18004G have an applications specific stateoftheart  
die designed for use in 220 V lineoperated SWITCHMODE Power  
supplies and electronic light ballasts.  
http://onsemi.com  
Features  
POWER TRANSISTOR  
5.0 AMPERES  
Improved Efficiency Due to Low Base Drive Requirements:  
High and Flat DC Current Gain h  
FE  
Fast Switching  
No Coil Required in Base Circuit for TurnOff (No Current Tail)  
1000 VOLTS  
35 and 75 WATTS  
Full Characterization at 125_C  
ON Semiconductor Six Sigma Philosophy Provides Tight and  
Reproducible Parametric Distributions  
COLLECTOR  
2,4  
Two Package Choices: Standard TO220 or Isolated TO220  
MJF18004, Case 221D, is UL Recognized at 3500 V  
: File  
RMS  
1
#E69369  
BASE  
These Devices are PbFree and are RoHS Compliant*  
3
MAXIMUM RATINGS  
EMITTER  
Rating  
Symbol  
Value  
450  
1000  
9.0  
Unit  
MARKING  
DIAGRAMS  
CollectorEmitter Sustaining Voltage  
CollectorBase Breakdown Voltage  
EmitterBase Voltage  
V
CEO  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Adc  
Adc  
V
V
CES  
EBO  
4
V
Collector Current Continuous  
Collector Current Peak (Note 1)  
I
C
5.0  
I
10  
MJE18004G  
AYWW  
CM  
Base Current  
Base Current  
Continuous  
I
B
2.0  
TO220AB  
CASE 221A09  
STYLE 1  
Peak (Note 1)  
I
4.0  
BM  
1
2
RMS Isolation Voltage (Note 2)  
V
ISOL  
MJF18004  
4500  
3
Test No. 1 Per Figure 22a  
Test No. 2 Per Figure 22b  
Test No. 3 Per Figure 22c  
3500  
1500  
(for 1 sec, R.H. < 30%, T = 25_C)  
A
Total Device Dissipation @ T = 25_C  
P
D
W
W/_C  
C
MJE18004  
MJF18004  
MJE18004  
MJF18004  
75  
35  
0.6  
0.28  
TO220 FULLPACK  
CASE 221D  
MJF18004G  
AYWW  
Derate above 25°C  
STYLE 2  
UL RECOGNIZED  
1
Operating and Storage Temperature  
T , T  
65 to 150  
_C  
J
stg  
2
3
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max  
Unit  
G
A
Y
= PbFree Package  
= Assembly Location  
= Year  
Thermal Resistance, JunctiontoCase  
R
_C/W  
q
JC  
MJE18004  
MJF18004  
1.65  
3.55  
WW  
= Work Week  
Thermal Resistance, JunctiontoAmbient  
R
62.5  
260  
_C/W  
_C  
q
JA  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 8 of this data sheet.  
Maximum Lead Temperature for Soldering  
Purposes 1/8from Case for 5 Seconds  
T
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.  
*For additional information on our PbFree strategy  
and soldering details, please download the  
ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
2. Proper strike and creepage distance must be provided.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
August, 2013 Rev. 11  
MJE18004/D  
 

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