MJE18002D2BV

更新时间： 2024-11-06 13:11:35

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管功率双极晶体管开关局域网
页数	文件大小	规格书
4页	155K
描述
2A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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MJE18002D2BV 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TO-220AB	包装说明：	PLASTIC, TO-220AB, 3 PIN
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.81
其他特性：	BUILT-IN EFFICIENT ANTISATURATION NETWORK	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	2 A	集电极-发射极最大电压：	450 V
配置：	SINGLE WITH BUILT-IN DIODE	最小直流电流增益 (hFE)：	6
JESD-30 代码：	R-PSFM-T3	JESD-609代码：	e0
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	NO
端子面层：	TIN LEAD	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	13 MHz
Base Number Matches：	1

MJE18002D2BV 数据手册

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by MJE18002D2/D

SEMICONDUCTOR TECHNICAL DATA

POWER TRANSISTORS

2 AMPERES

1000 VOLTS

50 WATTS

The MJE18002D2 use a newly developed technology, so called H2BIP*, to design

the state of art transistor dedicated to the Electronic Light Ballast and PFC** circuit.

The main advantages brought by these new transistors are:

•

Improved Global Efficiency Due to the Low Base Drive Requirements

DC Current Gain Typically Centered at 45

Extremely Low Storage Time Variation, Thanks to the Antisaturation Network

Easy to Use Thanks to the Integrated Collector/Emitter Diode

The MOTOROLA “Sig Sixma” philosophy provides tight and reproductible

parameter distribution.

*High speed High gain BIPolar transistor

**Power Factor Control

CASE 221A–06

TO–220AB

MAXIMUM RATINGS

Rating

Symbol

Value

450

Unit

Vdc

Adc

Collector–Emitter Sustaining Voltage

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

CEO

1000

CBO

CES

EBO

Collector Current — Continuous

— Peak (1)

Base Current — Continuous

Base Current — Peak (1)

Adc

*Total Device Dissipation @ T = 25 C

*Derate above 25°C

0.4

Watt

W/ C

Operating and Storage Temperature

T , T

–65 to 150

stg

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

2.5

62.5

C/W

θJC

θJA

Maximum Lead Temperature for Soldering Purposes:

1/8″ from case for 5 seconds

260

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4

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与MJE18002D2BV相关器件

型号	品牌	获取价格	描述	数据表
MJE18002D2DW	ONSEMI	获取价格	TRANSISTOR 2 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE18002G	ONSEMI	获取价格	SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications
MJE18002L	MOTOROLA	获取价格	2 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE18002N	MOTOROLA	获取价格	Power Bipolar Transistor, 2A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE18002S	MOTOROLA	获取价格	Power Bipolar Transistor, 2A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE18002T	MOTOROLA	获取价格	Power Bipolar Transistor, 2A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE18002U	MOTOROLA	获取价格	2A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE18002U2	MOTOROLA	获取价格	2A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE18002W	MOTOROLA	获取价格	Power Bipolar Transistor, 2A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE18002WD	MOTOROLA	获取价格	Power Bipolar Transistor, 2A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast

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