MJE18002D2

更新时间： 2024-11-05 22:46:15

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率双极晶体管开关局域网
页数	文件大小	规格书
4页	155K
描述
POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MJE18002D2 技术参数

生命周期：	Transferred	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	风险等级：	5.41
其他特性：	BUILT-IN ANTISATURATION NETWORK	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	2 A	基于收集器的最大容量：	100 pF
集电极-发射极最大电压：	450 V	配置：	SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE)：	6	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	JESD-609代码：	e0
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	NPN	功耗环境最大值：	50 W
认证状态：	Not Qualified	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	13 MHz
最大关闭时间（toff）：	1250 ns	最大开启时间（吨）：	150 ns
VCEsat-Max：	0.75 V	Base Number Matches：	1

MJE18002D2 数据手册

Order this document

by MJE18002D2/D

SEMICONDUCTOR TECHNICAL DATA

POWER TRANSISTORS

2 AMPERES

1000 VOLTS

50 WATTS

The MJE18002D2 use a newly developed technology, so called H2BIP*, to design

the state of art transistor dedicated to the Electronic Light Ballast and PFC** circuit.

The main advantages brought by these new transistors are:

•

Improved Global Efficiency Due to the Low Base Drive Requirements

DC Current Gain Typically Centered at 45

Extremely Low Storage Time Variation, Thanks to the Antisaturation Network

Easy to Use Thanks to the Integrated Collector/Emitter Diode

The MOTOROLA “Sig Sixma” philosophy provides tight and reproductible

parameter distribution.

*High speed High gain BIPolar transistor

**Power Factor Control

CASE 221A–06

TO–220AB

MAXIMUM RATINGS

Rating

Symbol

Value

450

Unit

Vdc

Adc

Collector–Emitter Sustaining Voltage

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

CEO

1000

CBO

CES

EBO

Collector Current — Continuous

— Peak (1)

Base Current — Continuous

Base Current — Peak (1)

Adc

*Total Device Dissipation @ T = 25 C

*Derate above 25°C

0.4

Watt

W/ C

Operating and Storage Temperature

T , T

–65 to 150

stg

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

2.5

62.5

C/W

θJC

θJA

Maximum Lead Temperature for Soldering Purposes:

1/8″ from case for 5 seconds

260

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4

中文翻译

下载PDF

与MJE18002D2相关器件

型号	品牌	获取价格	描述	数据表
MJE18002D2AF	ONSEMI	获取价格	TRANSISTOR 2 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE18002D2AK	ONSEMI	获取价格	暂无描述
MJE18002D2AS	ONSEMI	获取价格	2A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE18002D2AU	ONSEMI	获取价格	2A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE18002D2BA	ONSEMI	获取价格	2A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE18002D2BC	ONSEMI	获取价格	TRANSISTOR 2 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE18002D2BD	ONSEMI	获取价格	2A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE18002D2BG	ONSEMI	获取价格	暂无描述
MJE18002D2BS	ONSEMI	获取价格	TRANSISTOR 2 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE18002D2BV	ONSEMI	获取价格	2A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

与MJE18002D2相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

12
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

33

产品中心

服务支持

精选活动

关于我们

帮助中心

MJE18002D2

MJE18002D2 技术参数

MJE18002D2 数据手册

与MJE18002D2相关器件

与MJE18002D2相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MJE18002D2

MJE18002D2 技术参数

MJE18002D2 数据手册

与MJE18002D2相关器件

与MJE18002D2相关文章

您还可以找

您在本页遇到什么问题？