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MJE18002D2AK PDF预览

MJE18002D2AK

更新时间: 2024-09-16 13:11:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关局域网
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4页 155K
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MJE18002D2AK 数据手册

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Order this document  
by MJE18002D2/D  
SEMICONDUCTOR TECHNICAL DATA  
POWER TRANSISTORS  
2 AMPERES  
1000 VOLTS  
50 WATTS  
The MJE18002D2 use a newly developed technology, so called H2BIP*, to design  
the state of art transistor dedicated to the Electronic Light Ballast and PFC** circuit.  
The main advantages brought by these new transistors are:  
Improved Global Efficiency Due to the Low Base Drive Requirements  
DC Current Gain Typically Centered at 45  
Extremely Low Storage Time Variation, Thanks to the Antisaturation Network  
Easy to Use Thanks to the Integrated Collector/Emitter Diode  
The MOTOROLA “Sig Sixma” philosophy provides tight and reproductible  
parameter distribution.  
*High speed High gain BIPolar transistor  
**Power Factor Control  
CASE 221A–06  
TO–220AB  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
450  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Sustaining Voltage  
Collector–Base Breakdown Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Voltage  
V
V
CEO  
1000  
1000  
12  
CBO  
V
V
CES  
EBO  
Collector Current — Continuous  
— Peak (1)  
I
C
2
5
I
CM  
Base Current — Continuous  
Base Current — Peak (1)  
I
1
2
Adc  
B
I
BM  
*Total Device Dissipation @ T = 25 C  
C
*Derate above 25°C  
P
D
50  
0.4  
Watt  
W/ C  
Operating and Storage Temperature  
T , T  
65 to 150  
C
J
stg  
THERMAL CHARACTERISTICS  
Thermal Resistance — Junction to Case  
Thermal Resistance — Junction to Ambient  
R
R
2.5  
62.5  
C/W  
C
θJC  
θJA  
Maximum Lead Temperature for Soldering Purposes:  
1/8from case for 5 seconds  
T
260  
L
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.  
This document contains information on a new product. Specifications and information herein are subject to change without notice.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
Motorola, Inc. 1995

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