5秒后页面跳转
捷配首页

Datasheet > MJE18002D2BD
MJE18002D2BD PDF预览

MJE18002D2BD

更新时间： 2024-11-06 19:47:03
品牌 Logo 应用领域
安森美 - ONSEMI 局域网晶体管
页数 文件大小 规格书
8页 146K
描述
2A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

阅读下载

中文翻译

获取价格

MJE18002D2BD 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：PLASTIC, TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.81
其他特性：BUILT-IN EFFICIENT ANTISATURATION NETWORK外壳连接：COLLECTOR
最大集电极电流 (IC)：2 A集电极-发射极最大电压：450 V
配置：SINGLE WITH BUILT-IN DIODE最小直流电流增益 (hFE)：6
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：NO
端子面层：TIN LEAD端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管元件材料：SILICON标称过渡频率 (fT)：13 MHz
Base Number Matches：1

MJE18002D2BD 数据手册

 浏览型号MJE18002D2BD的Datasheet PDF文件第2页浏览型号MJE18002D2BD的Datasheet PDF文件第3页浏览型号MJE18002D2BD的Datasheet PDF文件第4页浏览型号MJE18002D2BD的Datasheet PDF文件第5页浏览型号MJE18002D2BD的Datasheet PDF文件第6页浏览型号MJE18002D2BD的Datasheet PDF文件第7页 
MJE18002G  
SWITCHMODEt  
NPN Bipolar Power Transistor  
For Switching Power Supply Applications  
The MJE18002G have an applications specific state−of−the−art die  
designed for use in 220 V line operated Switchmode Power supplies  
and electronic light ballasts.  
http://onsemi.com  
POWER TRANSISTOR  
2.0 AMPERES  
100 VOLTS − 50 WATTS  
Features  
• Improved Efficiency Due to Low Base Drive Requirements:  
♦ High and Flat DC Current Gain h  
♦ Fast Switching  
FE  
♦ No Coil Required in Base Circuit for Turn−Off (No Current Tail)  
• Tight Parametric Distributions are Consistent Lot−to−Lot  
• Standard TO−220  
• These Devices are Pb−Free and are RoHS Compliant*  
TO−220AB  
CASE 221A−09  
STYLE 1  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
450  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector−Emitter Sustaining Voltage  
Collector−Emitter Breakdown Voltage  
Emitter−Base Voltage  
V
CEO  
1
2
3
V
CES  
V
EBO  
1000  
9.0  
Collector Current − Continuous  
− Peak (Note 1)  
I
2.0  
5.0  
C
MARKING DIAGRAM  
I
CM  
Base Current  
− Continuous  
− Peak (Note 1)  
I
1.0  
2.0  
Adc  
B
I
BM  
Total Device Dissipation @ T = 25_C  
P
50  
W
C
D
Derate above 25°C  
0.4  
W/_C  
MJE18002G  
AY WW  
Operating and Storage Temperature  
THERMAL CHARACTERISTICS  
T , T  
J
−65 to 150  
_C  
stg  
Characteristics  
Symbol  
Max  
2.5  
Unit  
_C/W  
_C/W  
_C  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
A
Y
= Assembly Location  
= Year  
R
q
JA  
62.5  
260  
Maximum Lead Temperature for Soldering  
Purposes 1/8″ from Case for 5 Seconds  
T
L
WW = Work Week  
G
= Pb−Free Package  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
50 Units / Rail  
MJE18002G  
TO−220  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
April, 2010 − Rev. 7  
MJE18002/D  
 
12345678

中文翻译

下载PDF

与MJE18002D2BD相关器件

型号 品牌 获取价格 描述 数据表
MJE18002D2BG ONSEMI

获取价格

 		暂无描述
MJE18002D2BS ONSEMI

获取价格

 		TRANSISTOR 2 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE18002D2BV ONSEMI

获取价格

 		2A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE18002D2DW ONSEMI

获取价格

 		TRANSISTOR 2 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE18002G ONSEMI

获取价格

 		SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications
MJE18002L MOTOROLA

获取价格

 		2 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE18002N MOTOROLA

获取价格

 		Power Bipolar Transistor, 2A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE18002S MOTOROLA

获取价格

 		Power Bipolar Transistor, 2A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE18002T MOTOROLA

获取价格

 		Power Bipolar Transistor, 2A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE18002U MOTOROLA

获取价格

 		2A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB

与MJE18002D2BD相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证