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MJE18002D2BD PDF预览

MJE18002D2BD

更新时间： 2024-11-23 19:47:03
品牌 Logo 应用领域
安森美 - ONSEMI 局域网晶体管
页数 文件大小 规格书
8页 146K
描述
2A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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MJE18002D2BD 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：PLASTIC, TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.81
其他特性：BUILT-IN EFFICIENT ANTISATURATION NETWORK外壳连接：COLLECTOR
最大集电极电流 (IC)：2 A集电极-发射极最大电压：450 V
配置：SINGLE WITH BUILT-IN DIODE最小直流电流增益 (hFE)：6
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：NO
端子面层：TIN LEAD端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管元件材料：SILICON标称过渡频率 (fT)：13 MHz
Base Number Matches：1

MJE18002D2BD 数据手册

 浏览型号MJE18002D2BD的Datasheet PDF文件第2页浏览型号MJE18002D2BD的Datasheet PDF文件第3页浏览型号MJE18002D2BD的Datasheet PDF文件第4页浏览型号MJE18002D2BD的Datasheet PDF文件第5页浏览型号MJE18002D2BD的Datasheet PDF文件第6页浏览型号MJE18002D2BD的Datasheet PDF文件第7页 
MJE18002G  
SWITCHMODEt  
NPN Bipolar Power Transistor  
For Switching Power Supply Applications  
The MJE18002G have an applications specific state−of−the−art die  
designed for use in 220 V line operated Switchmode Power supplies  
and electronic light ballasts.  
http://onsemi.com  
POWER TRANSISTOR  
2.0 AMPERES  
100 VOLTS − 50 WATTS  
Features  
• Improved Efficiency Due to Low Base Drive Requirements:  
♦ High and Flat DC Current Gain h  
♦ Fast Switching  
FE  
♦ No Coil Required in Base Circuit for Turn−Off (No Current Tail)  
• Tight Parametric Distributions are Consistent Lot−to−Lot  
• Standard TO−220  
• These Devices are Pb−Free and are RoHS Compliant*  
TO−220AB  
CASE 221A−09  
STYLE 1  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
450  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector−Emitter Sustaining Voltage  
Collector−Emitter Breakdown Voltage  
Emitter−Base Voltage  
V
CEO  
1
2
3
V
CES  
V
EBO  
1000  
9.0  
Collector Current − Continuous  
− Peak (Note 1)  
I
2.0  
5.0  
C
MARKING DIAGRAM  
I
CM  
Base Current  
− Continuous  
− Peak (Note 1)  
I
1.0  
2.0  
Adc  
B
I
BM  
Total Device Dissipation @ T = 25_C  
P
50  
W
C
D
Derate above 25°C  
0.4  
W/_C  
MJE18002G  
AY WW  
Operating and Storage Temperature  
THERMAL CHARACTERISTICS  
T , T  
J
−65 to 150  
_C  
stg  
Characteristics  
Symbol  
Max  
2.5  
Unit  
_C/W  
_C/W  
_C  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
A
Y
= Assembly Location  
= Year  
R
q
JA  
62.5  
260  
Maximum Lead Temperature for Soldering  
Purposes 1/8″ from Case for 5 Seconds  
T
L
WW = Work Week  
G
= Pb−Free Package  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
50 Units / Rail  
MJE18002G  
TO−220  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
April, 2010 − Rev. 7  
MJE18002/D  
 
12345678

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