5秒后页面跳转
MJE180 PDF预览

MJE180

更新时间: 2024-11-27 22:46:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关音频放大器
页数 文件大小 规格书
4页 52K
描述
Low Power Audio Amplifier Low Current High Speed Switching Applications

MJE180 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.17外壳连接:ISOLATED
最大集电极电流 (IC):3 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):12
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):1.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

MJE180 数据手册

 浏览型号MJE180的Datasheet PDF文件第2页浏览型号MJE180的Datasheet PDF文件第3页浏览型号MJE180的Datasheet PDF文件第4页 
MJE180/181/182  
Low Power Audio Amplifier  
Low Current High Speed Switching Applications  
TO-126  
1. Emitter 2.Collector 3.Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage : MJE180  
60  
80  
100  
V
V
V
CBO  
: MJE181  
: MJE182  
Collector-Emitter Voltage : MJE180  
40  
60  
80  
V
V
V
CEO  
: MJE181  
: MJE182  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
7
V
A
EBO  
I
3
C
I
I
6
1
A
CP  
B
A
P
Collector Dissipation (T =25°C)  
1.5  
W
W
°C  
°C  
C
a
P
T
T
Collector Dissipation (T =25°C)  
12.5  
C
C
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Max. Units  
BV  
Collector -Emitter Breakdown Voltage  
CEO  
: MJE180  
: MJE181  
: MJE182  
I
= 10mA, I = 0  
40  
60  
80  
V
V
V
C
B
I
Collector Cut-off Current : MJE180  
V
V
V
V
V
V
= 60V, I = 0  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
µA  
µA  
µA  
mA  
mA  
mA  
CBO  
CB  
CB  
CB  
CB  
CB  
CB  
B
: MJE181  
: MJE182  
: MJE180  
: MJE181  
: MJE182  
= 80V, I = 0  
E
= 100V, I = 0  
E
= 60V, I = 0 @ T = 150°C  
E
C
= 80V, I = 0 @ T = 150°C  
E
C
= 100V, I = 0 @ T = 150°C  
E
C
I
Emitter Cut-off Current  
DC Current Gain  
V
= 7V, I = 0  
0.1  
µA  
EBO  
BE  
C
h
V
V
V
= 1V, I = 100mA  
50  
30  
12  
250  
FE  
CE  
CE  
CE  
C
= 1V, I = 500mA  
C
= 1V, I = 1.5A  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
I
I
I
= 500mA, I = 50mA  
0.3  
0.9  
1.7  
V
V
V
CE  
C
C
C
B
= 1.5A, I = 150mA  
B
= 3A, I = 600mA  
B
V
V
(sat)  
(on)  
I
I
= 1.5A, I = 150mA  
1.5  
2.0  
V
V
BE  
BE  
C
C
B
= 3A, I = 600mA  
B
Base-Emitter ON Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
V
V
V
= 1V, I = 500mA  
1.2  
V
CE  
CE  
CB  
C
f
= 10V, I = 100mA  
50  
MHz  
pF  
T
C
C
= 10V, I = 0, f = 0.1MHz  
E
30  
ob  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, February 2001  

MJE180 替代型号

型号 品牌 替代类型 描述 数据表
MJE180G ONSEMI

功能相似

Complementary Plastic Silicon Power Transistors 40 − 60 − 80 VOLTS 12.5 WATTS

与MJE180相关器件

型号 品牌 获取价格 描述 数据表
MJE18002 MOTOROLA

获取价格

POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS
MJE18002 ONSEMI

获取价格

POWER TRANSISTOR
MJE18002 ISC

获取价格

Silicon NPN Power Transistors
MJE1800216 MOTOROLA

获取价格

2A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE1800216A MOTOROLA

获取价格

2 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE18002A MOTOROLA

获取价格

2A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE18002AF MOTOROLA

获取价格

2A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE18002AJ MOTOROLA

获取价格

Power Bipolar Transistor, 2A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE18002BG ONSEMI

获取价格

2A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE18002C MOTOROLA

获取价格

2A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB