Datasheet > MJE180

MJE180

更新时间： 2024-11-28 10:55:47

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	105K
描述
isc Silicon NPN Power Transistor

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中文翻译

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技术参数
数据手册

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MJE180 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.55
Base Number Matches：	1

MJE180 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

MJE180

DESCRIPTION

·Collector–Emitter Sustaining Voltage—

: V_CEO(SUS)= 40 V

·DC Current Gain—

: h_FE= 30(Min) @ I_C= 0.5 A

= 12(Min) @ I_C= 1.5 A

·Complement to Type MJE170

APPLICATIONS

·Low power audio amplifier

·Low current high speed switching applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-peak

Base Current

VALUE

UNIT

I_CM

I_B

Collector Power Dissipation

T_a=25℃

1.5

P_C

Collector Power Dissipation

T_C=25℃

12.5

150

-65~150

Junction Temperature

℃

T_i

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

℃/W

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

R_{th j-c}

83.4

R_{th j-a}

isc Website：www.iscsemi.cn

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