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MJB44H11T4 PDF预览

MJB44H11T4

更新时间: 2024-11-07 20:30:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 开关晶体管
页数 文件大小 规格书
11页 401K
描述
Low voltage NPN power transistor

MJB44H11T4 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.3Is Samacsys:N
最大集电极电流 (IC):10 A配置:Single
最小直流电流增益 (hFE):40最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):50 W
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

MJB44H11T4 数据手册

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MJB44H11T4  
Low voltage NPN power transistor  
Datasheet  
-
production data  
Features  
Low collector-emitter saturation voltage  
Fast switching speed  
TAB  
Applications  
3
Power amplifier  
Switching circuits  
1
D2PAK  
Description  
This device is an NPN transistor manufactured  
using new low voltage planar technology with  
double metal process. The result is a transistor  
which boasts exceptionally high gain performance  
coupled with very low saturation voltage.  
Figure 1. Internal schematic diagram  
Table 1. Device summary  
Order codes  
Marking  
MJB44H11  
Package  
Packaging  
MJB44H11T4  
D2PAK  
Tape and reel  
May 2014  
DocID022716 Rev 2  
1/11  
This is information on a product in full production.  
www.st.com  

MJB44H11T4 替代型号

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MJB44H11T4-A STMICROELECTRONICS

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