Datasheet > MIE-384A4

MIE-384A4

更新时间： 2024-11-06 22:30:07

品牌	Logo	应用领域
东贝光电 - UOT		二极管
页数	文件大小	规格书
2页	33K
描述
AlGaAs/GaAs T-1 PACKAGE INFRARED EMITTING DIODE

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MIE-384A4 数据手册

AlGaAs/GaAs T-1 PACKAGE

MIE-384A4

INFRARED EMITTING DIODE

Description

Package Dimensions

The MIE-384A4 is an infrared emitting diode utilizing

GaAs with AlGaAs window coating chip technology.

It is molded in water clear plastic package.

Unit : mm (inches )

4.6±0.30

(.181)

3.1±0.20

(.122)

5.7

(.224)

2.5

(.10)

SEE NOTE 2

23.40MIN.

(.920)

Features

l High radiant power and high radiant intensity

l Suitable for DC and high pulse current operation

l Special T-1 ( f 3mm ) package

l Peak wavelength l _p= 940 nm

l Good spectral matching to si-photodetector

l Radiant angle : ±14°

.50 TYP.

(.020)

1.00MIN.

(.040)

2.54

(.100)

Notes :

1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.

2. Protruded resin under flange is 0.4 mm (.0157") max.

3. Lead spacing is measured where the leads emerge from the package.

Absolute Maximum Ratings

@ T_A=25^oC

Parameter

Maximum Rating

Unit

Power Dissipation

120

Peak Forward Current

Continuous Forward Current

Reverse Voltage

100

-55^oC to +100^oC

260^oC for 5 seconds

Operating Temperature Range

Storage Temperature Range

Lead Soldering Temperature

Unity Opto Technology Co., Ltd.

02/04/2002

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