Datasheet > MIE-526L3U

MIE-526L3U

更新时间： 2024-11-08 22:46:15

品牌	Logo	应用领域
东贝光电 - UOT		二极管
页数	文件大小	规格书
2页	36K
描述
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE

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MIE-526L3U 数据手册

GaAlAs T-1 3/4 PACKAGE

INFRARED EMITTING DIODE

MIE-526L3U

Description

Package Dimensions

The MIE-526L3U is infrared emitting diodes in

GaAlAs technology molded in pastel blue

transparent package.

Unit: mm (inches)

f 5.05

(.200)

5.47

(.215)

7.62

(.300)

5.90

(.230)

Features

1.0

(.040)

SEE NOTE 2

l Suitable for DC and high pulse current operation

l Standard T-1 3/4 (f 5mm) package

FLAT DENOTES CATHODE

23.40 MIN.

(.920)

l Peak wavelength l _p= 880 nm

l Good spectral matching to si-photodetector

l Radiant angle : 20°

0.50 TYP.

(.020)

1.00MIN.

(.040)

2.54 NOM.

(.100)

SEE NOTE 3

Notes :

1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.

2. Protruded resin under flange is 1.5 mm (.059") max.

3. Lead spacing is measured where the leads emerge from the package.

Absolute Maximum Ratings

@ T_A=25^oC

Parameter

Power Dissipation

Maximum Rating

Unit

120

Peak Forward Current(300pps,10ms pulse)

Continuos Forward Current

Reverse Voltage

100

-55^oC to +100^oC

260^oC for 5 seconds

Operating Temperature Range

Storage Temperature Range

Lead Soldering Temperature

Unity Opto Technology Co., Ltd.

11/18/2000

中文翻译

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