Datasheet > MIE-536A2U

MIE-536A2U

更新时间： 2024-11-08 22:26:39

品牌	Logo	应用领域
东贝光电 - UOT		二极管
页数	文件大小	规格书
2页	33K
描述
AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE

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MIE-536A2U 数据手册

AlGaAs/GaAs T-1 3/4 PACKAGE

INFRARED EMITTING DIODE

MIE-536A2U

Description

Package Dimensions

f 5.05

(.200)

The MIE-536A2U is infrared emitting diodes in

GaAs technology with AlGaAs window coating

molded in pastel pink transparent package.

Unite: mm ( inches )

5.47

(.215)

7.62

(.300)

5.90

(.230)

Features

1.00

l High radiant power and high radiant intensity

(.040)

FLAT DENOTES CATHODE

l Standard T-1 3/4 ( f 5mm) package

l Peak wavelength l _p= 940 nm

l Good spectral matching to si-photodetector

l Radiant angle : 35°

23.4 0MIN.

(.920)

0.50 TYP.

(.020)

1.00MIN

(.040)

2.54

(.100)

Notes :

1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.

2. Protruded resin under flange is 1.5 mm (.059") max.

3. Lead spacing is measured where the leads emerge from the package

Absolute Maximum Ratings

@ T_A=25^oC

Parameter

Maximum Rating

Unit

Power Dissipation

120

Peak Forward Current(300pps,10ms pulse)

Continuos Forward Current

Reverse Voltage

100

-55^oC to +100^oC

260^oC for 5 seconds

Operating Temperature Range

Storage Temperature Range

Lead Soldering Temperature

Unity Opto Technology Co., Ltd.

11/17/2000

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