Datasheet > MIE-544L3

MIE-544L3

更新时间： 2024-02-21 21:55:09

品牌	Logo	应用领域
东贝光电 - UOT		二极管高功率电源
页数	文件大小	规格书
2页	36K
描述
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE

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MIE-544L3 数据手册

GaAlAs HIGH POWER T-1 3/4 PACKAGE

INFRARED EMITTING DIODE

MIE-544L3

Description

Package Dimensions

f 5.05

Unit : mm (inches )

(.200)

The MIE-544L3 is an infrared emitting diode in GaAlAs

on GaAlAs technology molded in water clear plastic package.

5.47

(.215)

7.62

(.300)

5.90

(.230)

1.00

(.040)

FLAT DENOTES CATHODE

23.40 MIN.

(.920)

Features

0.50 TYP.

(.020)

l High radiant power and high radiant intesity

l Suitable for DC and high pulse current operation

l Standard T-1 3/4 (f 5mm) package

l Peak wavelength l _P=880 nm

l Good spectral matching to Si-Photodetecto

l Radiant angle : 40°

1.00MIN

(.040)

2.54

(.100)

Notes :

1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.

2. Protruded resin under flange is 1.5 mm (.059") max.

3. Lead spacing is measured where the leads emerge from the package.

Absolute Maximum Ratings

'@ T_A=25^oC

Parameter

Power Dissipation

Maximum Rating

Unit

120

Peak Forward Current(300pps,10ms pulse)

Continuos Forward Current

Reverse Voltage

100

-55^oC to +100^oC

260^oC for 5 seconds

Operating Temperature Range

Storage Temperature Range

Lead Soldering Temperature

Unity Opto Technology Co., Ltd.

11/17/2000

中文翻译

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