Datasheet > MIE-534A4

MIE-534A4

更新时间： 2024-01-31 12:32:06

品牌	Logo	应用领域
东贝光电 - UOT		二极管高功率电源
页数	文件大小	规格书
2页	34K
描述
AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE

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中文翻译

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MIE-534A4 数据手册

AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE

INFRARED EMITTING DIODE

MIE-534A4

Description

Package Dimensions

Unit: mm ( inches )

The MIE-534A4 is an infrared emitting diode utilizing

GaAs with AlGaAs window coating chip technology.

It is molded in water clear plastic package.

5.05

(.199)

5.47

(.215)

7.62

(.300)

5.90

(.230)

1.00

(.039)

Features

SEE NOTE 2

l High radiant power and high radiant intensity

l Suitable for DC and high pulse current operation

l Standard T-1 3/4 ( f 5mm ) package, radiant angle : 30°

l Peak wavelength l _p= 940 nm

FLAT DENOTES CATHODE

23.40 MIN.

(.921)

0.50 TYP.

(.020)

l Good spectral matching to si-photodetector

1.00MIN.

(.039)

2.54 NOM.

(.100)

SEE NOTE 3

Notes :

1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.

2. Protruded resin under flange is 1.5 mm (.059") max.

3. Lead spacing is measured where the leads emerge from the package.

Absolute Maximum Ratings

@ T =25^o^oC

@ T =25 C

Parameter

Power Dissipation

Maximum Rating

Unit

120

Peak Forward Current(300pps,10ms pulse)

Continuos Forward Current

Reverse Voltage

100

-55^oC to +100^oC

260^oC for 5 seconds

Operating Temperature Range

Storage Temperature Range

Lead Soldering Temperature

Unity Opto Technology Co., Ltd.

11/20/2000

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