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MIE-406A2U PDF预览

MIE-406A2U

更新时间: 2024-11-06 22:26:39
品牌 Logo 应用领域
东贝光电 - UOT 二极管高功率电源
页数 文件大小 规格书
2页 36K
描述
AlGaAs/GaAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE

MIE-406A2U 数据手册

 浏览型号MIE-406A2U的Datasheet PDF文件第2页 
AlGaAs/GaAs HIGH POWER TO-46 PACKAGE  
INFRARED EMITTING DIODE  
MIE-406A2U  
Description  
Package Dimensions  
The MIE-406A2U is an infrared emitting diodes in GaAs  
technology with AlGaAs window coating molded in  
plastic pink transparent package.  
Unit : mm ( inches )  
f 4.75  
(.187)  
45°  
CATHODE  
INDICATOR  
5.60  
(.221)  
.70  
(.028)  
Features  
5.46  
(.215)  
l High radiant power and high radiant intensity  
.25 MAX  
(.059 )  
l Standard TO-46 package, radiant angle : 25°  
l Peak wavelength l p = 940 nm  
25.00 MIN  
(.984)  
.50 TYP.  
(.020)  
l Good spectral matching to si-photodetector  
1.00 MIN  
(.040)  
2.54  
(.100)  
A
C
Notes :  
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.  
2. Protruded resin under flange is 1.5 mm (.059") max.  
3. Lead spacing is measured where the leads emerge from the package.  
Absolute Maximum Ratings  
oo
@ TA=25 C  
Parameter  
Power Dissipation  
Maximum Rating  
Unit  
mW  
A
120  
1
Peak Forward Current(300pps,10ms pulse)  
Continuos Forward Current  
Reverse Voltage  
100  
mA  
V
5
-55oC to +100oC  
-55oC to +100oC  
260oC for 5 seconds  
Operating Temperature Range  
Storage Temperature Range  
Lead Soldering Temperature  
Unity Opto Technology Co., Ltd.  
11/17/2000  

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